Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas Export

@article{45, abstract = {In this study, the effect of additive gases such as N2, Ar and O2 on the selective etching of tungsten (W) films relative to that of poly-Si films was investigated using inductively coupled CF4/Cl2-based plasmas. When CF4/Cl2 gas mixtures were used to etch W films and poly-Si, due to the formation of volatile etch products, the etch rates of W and poly-Si were very high. However, because the poly-Si etch product is more volatile than the W etch product, the etch selectivity of W over poly-Si was lower than 0.3. When Ar or N2 was added to a CF4/Cl2 gas mixture, the etch rates of both W and poly-Si were increased, however, the etch selectivity of W over poly-Si remained similar. When O2 was added to a CF4/Cl2 gas mixture, not only higher W etch rates (approx. 350 nm/min) but also higher etch selectivity of W over poly-Si (approx. 2.4) could be obtained by suppressing the poly-Si etch rate. The increase of W etch rates and etch selectivity by the oxygen addition to the CF4/Cl2 appears from the formation of volatile tungsten halogen oxide on the W surface and involatile silicon oxide on the poly-Si surface.}, author = {Park, S. D. and Lee, Y. J. and Cho, N. G. and Kim, S. G. and Choe, H. H. and Hong, M. P. and Yeom, G. Y.}, booktitle = {Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films}, citeulike-article-id = {3292326}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/j.tsf.2003.06.002}, citeulike-linkout-1 = {http://www.sciencedirect.com/science/article/B6TW0-49WMY34-B/2/14d5589f6fbca7e8d6ac6d75cea0af9b}, comment = {Temp\'{e}rature d'\'{e}bullition de diff\'{e}rents composants : Composants Temp\'{e}ratures d'\'{e}bullition (°C) SiCl4 58 WCl6 347 SiF4 -86 WCl5 275 SiO2 2590 WOCl4 227 TiCl4 58 WF6 17 TiF4 284 (sublimation) WOF4 186 WO3 1837 WO2 1730 L'ajout de N2 augmente la dissociation de CF4 et Cl2. (R\'{e}f\'{e}rence 11)}, day = {30}, doi = {10.1016/j.tsf.2003.06.002}, journal = {Thin Solid Films}, keywords = {ar, cf4-cl2, icp, n2, o2, tungsten}, month = {January}, pages = {586--591}, posted-at = {2008-09-19 09:57:32}, priority = {2}, title = {Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas}, url = {http://dx.doi.org/10.1016/j.tsf.2003.06.002}, volume = {447-448}, year = {2004} }

TY - JOUR ID - 45 L3 - citeulike-article-id:3292326 N2 - In this study, the effect of additive gases such as N2, Ar and O2 on the selective etching of tungsten (W) films relative to that of poly-Si films was investigated using inductively coupled CF4/Cl2-based plasmas. When CF4/Cl2 gas mixtures were used to etch W films and poly-Si, due to the formation of volatile etch products, the etch rates of W and poly-Si were very high. However, because the poly-Si etch product is more volatile than the W etch product, the etch selectivity of W over poly-Si was lower than 0.3. When Ar or N2 was added to a CF4/Cl2 gas mixture, the etch rates of both W and poly-Si were increased, however, the etch selectivity of W over poly-Si remained similar. When O2 was added to a CF4/Cl2 gas mixture, not only higher W etch rates (approx. 350 nm/min) but also higher etch selectivity of W over poly-Si (approx. 2.4) could be obtained by suppressing the poly-Si etch rate. The increase of W etch rates and etch selectivity by the oxygen addition to the CF4/Cl2 appears from the formation of volatile tungsten halogen oxide on the W surface and involatile silicon oxide on the poly-Si surface. JF - Thin Solid Films EP - 591 TI - Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas VL - 447-448 T2 - Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films SP - 586 KW - ar KW - cf4-cl2 KW - icp KW - n2 KW - o2 KW - tungsten N1 - Température d’ébullition de différents composants : Composants Températures d’ébullition (°C) SiCl4 58 WCl6 347 SiF4 -86 WCl5 275 SiO2 2590 WOCl4 227 TiCl4 58 WF6 17 TiF4 284 (sublimation) WOF4 186 WO3 1837 WO2 1730 L’ajout de N2 augmente la dissociation de CF4 et Cl2. (Référence 11) AU - Park, SD AU - Lee, YJ AU - Cho, NG AU - Kim, SG AU - Choe, HH AU - Hong, MP AU - Yeom, GY PY - 2004/01/30/ UR - http://dx.doi.org/10.1016/j.tsf.2003.06.002 ER -