Tungsten metal gate etching in Cl[sub 2]/O[sub 2] inductively coupled high density plasmas Export

@article{citeulike:4718814, abstract = {Plasma etching of W in a poly-Si/TiN/W/HfO2 gate stack is investigated in Cl2/O2 based plasmas. Preliminary studies have illustrated the issues induced with the introduction of a metal layer in the gate stack. Based on scanning electron microscopy observations, the authors first show that a mixture of Cl2, O2, and NF3 is required to successfully pattern the W layer without damaging the HfO2, poly-Si, and TiN profiles. For a better understanding of etch mechanisms, W etching is studied on blanket wafers and etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rates as a function of O2 ratio in Cl2/O2 and Cl2/O2/NF3 plasmas is interpreted. X-ray photoelectron spectroscopy analyses demonstrate that the introduction of O2 in Cl2 leads to the creation of a thick WOClx deposit on the gate sidewalls. However, the WOCl deposition can be controlled and eliminated by adding fluorine in the plasma during W etching.}, author = {Morel, T. and Bamola, S. and Ramos, R. and Beaurain, A. and Pargon, E. and Joubert, O.}, citeulike-article-id = {4718814}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000026000006001875000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JVB/26/1875}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures}, keywords = {cl2-nf3-o2, cl2-o2, metal-gate, tungsten, xps}, number = {6}, pages = {1875--1882}, posted-at = {2009-06-02 15:05:04}, priority = {0}, publisher = {AVS}, title = {Tungsten metal gate etching in Cl[sub 2]/O[sub 2] inductively coupled high density plasmas}, url = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000026000006001875000001&idtype=cvips&gifs=yes}, volume = {26}, year = {2008} }

TY - JOUR ID - citeulike:4718814 L3 - citeulike-article-id:4718814 N2 - Plasma etching of W in a poly-Si/TiN/W/HfO2 gate stack is investigated in Cl2/O2 based plasmas. Preliminary studies have illustrated the issues induced with the introduction of a metal layer in the gate stack. Based on scanning electron microscopy observations, the authors first show that a mixture of Cl2, O2, and NF3 is required to successfully pattern the W layer without damaging the HfO2, poly-Si, and TiN profiles. For a better understanding of etch mechanisms, W etching is studied on blanket wafers and etch rates are presented and discussed with respect to the plasma parameters. The evolution of the etch rates as a function of O2 ratio in Cl2/O2 and Cl2/O2/NF3 plasmas is interpreted. X-ray photoelectron spectroscopy analyses demonstrate that the introduction of O2 in Cl2 leads to the creation of a thick WOClx deposit on the gate sidewalls. However, the WOCl deposition can be controlled and eliminated by adding fluorine in the plasma during W etching. IS - 6 JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures EP - 1882 TI - Tungsten metal gate etching in Cl[sub 2]/O[sub 2] inductively coupled high density plasmas PB - AVS VL - 26 SP - 1875 KW - cl2-nf3-o2 KW - cl2-o2 KW - metal-gate KW - tungsten KW - xps AU - Morel, T AU - Bamola, S AU - Ramos, R AU - Beaurain, A AU - Pargon, E AU - Joubert, O PY - 2008/// UR - http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000026000006001875000001&idtype=cvips&gifs=yes ER -