Etching of high-k dielectric Zr[sub 1 - x]Al[sub x]O[sub y] films in chlorine-containing plasmas Export

@inproceedings{citeulike:514153, abstract = {As new, advanced high-k dielectrics are being developed to replace SiO2 in future generations of microelectronics devices, understanding their etch characteristics becomes vital for integration into the manufacturing process. We report on the etch rates and possible mechanisms for one such dielectric, Zr1–xAlxOy  (x0.2), in plasmas containing a mixture of Cl2 and BCl3, as a function of gas composition and ion impact energy. Higher concentrations of BCl3 enhance the etch rate as well as selectivity of Zr1–xAlxOy etching as compared to the etching of -Si, whereas increasing ion energy increases the etching rates but decreases selectivity. In a high density helical resonator plasma, etching rates on the order of 700 \r{A}/min and 1:1 selectivity are typical. Angle-resolved x-ray photoelectron spectroscopy was used to study the composition of the upper \~{}30 \r{A} of the film, before and at the end of the etching process. We found that the etching rate of Zr1–xAlxOy does not change with time for the range of Cl2/BCl3 ratios and ion energies investigated, whereas the -Si etching rate in pure BCl3 plasma and at zero substrate bias decreases with time, due to the formation of a B–Si film on the surface. {\copyright}2001 American Vacuum Society.}, author = {Pelhos, K. and Donnelly, V. M. and Kornblit, A. and Green, M. L. and Van Dover, R. B. and Manchanda, L. and Hu, Y. and Morris, M. and Bower, E.}, citeulike-article-id = {514153}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTAD6000019000004001361000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JVA/19/1361}, citeulike-linkout-2 = {http://dx.doi.org/10.1116/1.1349721}, doi = {10.1116/1.1349721}, journal = {The 47th international symposium: Vacuum, thin films, surfaces/interfaces, and processing NAN06}, keywords = {bcl3, cl2, dielectric, high-k, zralo}, number = {4}, pages = {1361--1366}, posted-at = {2006-02-21 09:50:49}, priority = {2}, publisher = {AVS}, title = {Etching of high-k dielectric Zr[sub 1 - x]Al[sub x]O[sub y] films in chlorine-containing plasmas}, url = {http://dx.doi.org/10.1116/1.1349721}, volume = {19}, year = {2001} }

TY - CONF ID - citeulike:514153 L3 - citeulike-article-id:514153 N2 - As new, advanced high-k dielectrics are being developed to replace SiO2 in future generations of microelectronics devices, understanding their etch characteristics becomes vital for integration into the manufacturing process. We report on the etch rates and possible mechanisms for one such dielectric, Zr1–xAlxOy  (x0.2), in plasmas containing a mixture of Cl2 and BCl3, as a function of gas composition and ion impact energy. Higher concentrations of BCl3 enhance the etch rate as well as selectivity of Zr1–xAlxOy etching as compared to the etching of -Si, whereas increasing ion energy increases the etching rates but decreases selectivity. In a high density helical resonator plasma, etching rates on the order of 700 Å/min and 1:1 selectivity are typical. Angle-resolved x-ray photoelectron spectroscopy was used to study the composition of the upper ~30 Å of the film, before and at the end of the etching process. We found that the etching rate of Zr1–xAlxOy does not change with time for the range of Cl2/BCl3 ratios and ion energies investigated, whereas the -Si etching rate in pure BCl3 plasma and at zero substrate bias decreases with time, due to the formation of a B–Si film on the surface. ©2001 American Vacuum Society. IS - 4 JF - The 47th international symposium: Vacuum, thin films, surfaces/interfaces, and processing NAN06 EP - 1366 TI - Etching of high-k dielectric Zr[sub 1 - x]Al[sub x]O[sub y] films in chlorine-containing plasmas PB - AVS VL - 19 SP - 1361 KW - bcl3 KW - cl2 KW - dielectric KW - high-k KW - zralo AU - Pelhos, K AU - Donnelly, VM AU - Kornblit, A AU - Green, ML AU - Van Dover, RB AU - Manchanda, L AU - Hu, Y AU - Morris, M AU - Bower, E PY - 2001/// UR - http://dx.doi.org/10.1116/1.1349721 ER -