Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane Export

@article{33, abstract = {The tapered etching of aluminum CHF3/Cl2/BCl3 gas mixtures in a hexode reactive ion etching reactor is reported. The process involves sidewall polymer deposition during etching; Auger analysis of the deposit showed mainly carbon and chlorine. The metal sidewall angle (taper angle) was studied as a function of processing conditions, the spacing between Al lines, and photoresist thickness. The extent of taper increased with increasing CHF3 flow rates, saturating at high flow rates, and decreased with increasing Cl2 flow rates. The extent of taper increased with bias in the range –190 to –230 V, and decreased in the range –230 to –260 V. In addition, the extent of taper increased with increasing spacing and with decreasing photoresist thickness. The taper angle for a given spacing can be tailored in the range 60°–90° by adjusting processing conditions. As expected, the step coverage of plasma-enhanced TEOS oxide on taper-etched aluminum lines showed a marked improvement over that of vertical aluminum lines.}, author = {Selamoglu, N. and Bredbenner, C. N. and Giniecki, T. A. and Stocker, H. J.}, citeulike-article-id = {524205}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000009000005002530000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JVB/9/2530}, citeulike-linkout-2 = {http://dx.doi.org/10.1116/1.585687}, comment = {Empilage : r\'{e}sine HPR 231 ou 206 (2µm) / ARC (120\r{A}) / Al (PVD, 500nm) / oxyde de Si (LPCVD, 200nm) Commentaires: Avec la chimie utilis\'{e}es et les conditions de gravure donn\'{e}es, la croissance du polym\`{e}re n'appara\^{i}t que sur les surfaces verticales, l\`{a} o\`{u} le bombardement ionique n'a pas lieu. * polym\`{e}re plus important pour les lignes isol\'{e}es. * Polym\`{e}re plus important pour les empilements \'{e}pais (ph\'{e}nom\`{e}ne d'ombrage) Tapered angle plus important que le d\'{e}bit de CHF3 augmente et quand le d\'{e}bit de Cl2 diminue. }, doi = {10.1116/1.585687}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures}, keywords = {aluminium, angle, chf3-cl2-bcl3, plasma, rie, taper}, number = {5}, pages = {2530--2535}, posted-at = {2006-02-28 15:00:10}, priority = {0}, publisher = {AVS}, title = {Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane}, url = {http://dx.doi.org/10.1116/1.585687}, volume = {9}, year = {1991} }

TY - JOUR ID - 33 L3 - citeulike-article-id:524205 N2 - The tapered etching of aluminum CHF3/Cl2/BCl3 gas mixtures in a hexode reactive ion etching reactor is reported. The process involves sidewall polymer deposition during etching; Auger analysis of the deposit showed mainly carbon and chlorine. The metal sidewall angle (taper angle) was studied as a function of processing conditions, the spacing between Al lines, and photoresist thickness. The extent of taper increased with increasing CHF3 flow rates, saturating at high flow rates, and decreased with increasing Cl2 flow rates. The extent of taper increased with bias in the range –190 to –230 V, and decreased in the range –230 to –260 V. In addition, the extent of taper increased with increasing spacing and with decreasing photoresist thickness. The taper angle for a given spacing can be tailored in the range 60°–90° by adjusting processing conditions. As expected, the step coverage of plasma-enhanced TEOS oxide on taper-etched aluminum lines showed a marked improvement over that of vertical aluminum lines. IS - 5 JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures EP - 2535 TI - Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane PB - AVS VL - 9 SP - 2530 KW - aluminium KW - angle KW - chf3-cl2-bcl3 KW - plasma KW - rie KW - taper N1 - Empilage : résine HPR 231 ou 206 (2µm) / ARC (120Å) / Al (PVD, 500nm) / oxyde de Si (LPCVD, 200nm) Commentaires: Avec la chimie utilisées et les conditions de gravure données, la croissance du polymère n’apparaît que sur les surfaces verticales, là où le bombardement ionique n’a pas lieu. * polymère plus important pour les lignes isolées. * Polymère plus important pour les empilements épais (phénomène d’ombrage) Tapered angle plus important que le débit de CHF3 augmente et quand le débit de Cl2 diminue. AU - Selamoglu, N AU - Bredbenner, CN AU - Giniecki, TA AU - Stocker, HJ PY - 1991/// UR - http://dx.doi.org/10.1116/1.585687 ER -