Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching Export

@inproceedings{37, abstract = {The addition of HBr has been used with oxygen and chlorine-based chemistries to improve selectivity of polysilicon to gate oxide in gate-stack etching. As a consequence of high selectivity, polymer residues become a major factor in critical-dimension (CD) control. It is believed that the presence of HBr in the plasma is responsible for polymer formation. HBr and its polymer residues may induce surface reactions to form thin oxide layers. Such a phenomenon has been observed if the wafers are not treated with HF vapor immediately after reactive ion etching (RIE) of the gate. The magnitude of the oxide film growth is proportional to the delayed time between RIE and HF vapor treatment. The sidewall thickness of the gate is also affected by the time-delay effect. The growth of the oxide film on the sidewalls can eventually affect the gate CD, and thus the device performance. A simple reaction model for the growth of the oxide film is proposed to explain the correlation between delayed time and CD bias. {\copyright}2000 American Vacuum Society.}, author = {Lin, Shih P. and Ou, Chen H. and Lee, Szetsen and Tien, Yu C. and Hsu, Chin F.}, citeulike-article-id = {524212}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTAD6000018000004001173000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JVA/18/1173}, citeulike-linkout-2 = {http://dx.doi.org/10.1116/1.582320}, comment = {Empilage : R\'{e}sine / masque dur Si3N4 / WSix / poly-Si / SiO2 / Si Commentaires: On parle ici de l'oxydation possible apr\`{e}s gravure. On a une d\'{e}viation de plus de 0,014µm du CD si on attend plus de trois jours pour le traitement HF. }, doi = {10.1116/1.582320}, journal = {The 46th international symposium of the american vacuum society}, keywords = {hbr-cl2-o2, poly-si, rie, time-delay-effect, wsix}, number = {4}, pages = {1173--1175}, posted-at = {2006-02-28 15:09:27}, priority = {0}, publisher = {AVS}, title = {Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching}, url = {http://dx.doi.org/10.1116/1.582320}, volume = {18}, year = {2000} }

TY - CONF ID - 37 L3 - citeulike-article-id:524212 N2 - The addition of HBr has been used with oxygen and chlorine-based chemistries to improve selectivity of polysilicon to gate oxide in gate-stack etching. As a consequence of high selectivity, polymer residues become a major factor in critical-dimension (CD) control. It is believed that the presence of HBr in the plasma is responsible for polymer formation. HBr and its polymer residues may induce surface reactions to form thin oxide layers. Such a phenomenon has been observed if the wafers are not treated with HF vapor immediately after reactive ion etching (RIE) of the gate. The magnitude of the oxide film growth is proportional to the delayed time between RIE and HF vapor treatment. The sidewall thickness of the gate is also affected by the time-delay effect. The growth of the oxide film on the sidewalls can eventually affect the gate CD, and thus the device performance. A simple reaction model for the growth of the oxide film is proposed to explain the correlation between delayed time and CD bias. ©2000 American Vacuum Society. IS - 4 JF - The 46th international symposium of the american vacuum society EP - 1175 TI - Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching PB - AVS VL - 18 SP - 1173 KW - hbr-cl2-o2 KW - poly-si KW - rie KW - time-delay-effect KW - wsix N1 - Empilage : Résine / masque dur Si3N4 / WSix / poly-Si / SiO2 / Si Commentaires: On parle ici de l’oxydation possible après gravure. On a une déviation de plus de 0,014µm du CD si on attend plus de trois jours pour le traitement HF. AU - Lin, Shih AU - Ou, Chen AU - Lee, Szetsen AU - Tien, Yu AU - Hsu, Chin PY - 2000/// UR - http://dx.doi.org/10.1116/1.582320 ER -