Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film Export

@article{43, abstract = {The effect of CO and CO2 addition to a CF4/O2 plasma on the etching characteristics of a low-pressure chemical vapor deposition tungsten film has been studied in a reactive ion etching reactor. Mass spectrometry and optical emission spectroscopy were used to monitor gas phase species at various compositions of etching gas. The main role of CO is scavenging F and O atoms, while that of CO2 is increasing the concentration of the O atom. The addition of a small amount of CO (1 sccm) to a CF4/O2 plasma enhances the etch rate of tungsten. With the addition of CO2, the etch rate of tungsten increases until the flow rate increases up to 5 sccm. The selectivity of W to SiO2 by adding CO and CO2 are 3.2 and 4.1, respectively. These values are relatively high when compared with the maximum selectivity of 2 in a CF4/O2 gas system. {\copyright}1995 American Vacuum Society}, author = {Kwon, Sung K. and Kim, Kyung N. and Nam, Chul W. and Woo, Seong I.}, citeulike-article-id = {528175}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JVTBD9000013000003000914000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?JVB/13/914}, citeulike-linkout-2 = {http://dx.doi.org/10.1116/1.588205}, comment = {Empilage : W (LPCVD, 1µm) / Si et SiO2 (840nm) / Si Commentaires : Conditions de gravure : RIE, 200mTorr, Prf = 200W On obtient l'ERmax pour W par gravure CF4/O2 avec un \% d'O2 diff\'{e}rent suivant le type de d\'{e}p\^{o}t de W. L'ajout de CO ou CO2 permet d'augmenter consid\'{e}rablement l'ER de W. Graphe des \'{e}volutions des esp\`{e}ces pr\'{e}sentes dans le plasma en fonction du d\'{e}bit de CO ou CO2 }, doi = {10.1116/1.588205}, journal = {Journal of Vacuum Science \& Technology B: Microelectronics and Nanometer Structures}, keywords = {cf4-o2, co, co2, etching, plasmas, rie, tungsten}, number = {3}, pages = {914--917}, posted-at = {2006-03-03 12:35:35}, priority = {0}, publisher = {AVS}, title = {Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film}, url = {http://dx.doi.org/10.1116/1.588205}, volume = {13}, year = {1995} }

TY - JOUR ID - 43 L3 - citeulike-article-id:528175 N2 - The effect of CO and CO2 addition to a CF4/O2 plasma on the etching characteristics of a low-pressure chemical vapor deposition tungsten film has been studied in a reactive ion etching reactor. Mass spectrometry and optical emission spectroscopy were used to monitor gas phase species at various compositions of etching gas. The main role of CO is scavenging F and O atoms, while that of CO2 is increasing the concentration of the O atom. The addition of a small amount of CO (1 sccm) to a CF4/O2 plasma enhances the etch rate of tungsten. With the addition of CO2, the etch rate of tungsten increases until the flow rate increases up to 5 sccm. The selectivity of W to SiO2 by adding CO and CO2 are 3.2 and 4.1, respectively. These values are relatively high when compared with the maximum selectivity of 2 in a CF4/O2 gas system. ©1995 American Vacuum Society IS - 3 JF - Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures EP - 917 TI - Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film PB - AVS VL - 13 SP - 914 KW - cf4-o2 KW - co KW - co2 KW - etching KW - plasmas KW - rie KW - tungsten N1 - Empilage : W (LPCVD, 1µm) / Si et SiO2 (840nm) / Si Commentaires : Conditions de gravure : RIE, 200mTorr, Prf = 200W On obtient l’ERmax pour W par gravure CF4/O2 avec un % d’O2 différent suivant le type de dépôt de W. L’ajout de CO ou CO2 permet d’augmenter considérablement l’ER de W. Graphe des évolutions des espèces présentes dans le plasma en fonction du débit de CO ou CO2 AU - Kwon, Sung AU - Kim, Kyung AU - Nam, Chul AU - Woo, Seong PY - 1995/// UR - http://dx.doi.org/10.1116/1.588205 ER -