Molybdenum Etching Using CCl4/O2 Mixture Gas Export

@article{49, abstract = {Molybdenum was etched using CCl4/O2 mixture gas. Typical etch rate is about 80 nm/min, and its relative etch rate ratio to resist AZ1350J was 2: 1. Etch rates of silicon and silicon-dioxide were negligibly small, as compared to molybdenum etch rate. The dissociation process of CCl4/O2 analogous to the dissociation process in CF4/O2 mixture gas plasma was observed. Molybdenum-oxide was detected on the surface of silicon, silicon-dioxide and the resist, which were etched with molybdenum, using Auger electron spectroscopy. The deposited molybdenum-oxide increases the etch selectivity of molybdenum over underlying materials. The lateral etching rate after etching end point was about 13 nm/min, in the typical etching condition. The main reason for the pattern width narrowing in the etching was due to moderate resist slope.}, author = {Kurogi, Yukinori and Kamimura, Kazuo}, citeulike-article-id = {556152}, citeulike-linkout-0 = {http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=21&page=168&submit3=Retrieve}, comment = {Empilage : * Mo (300nm) / SiO2 (100nm) / Si * SiO2 (1µm) / Si Commentaires: R\'{e}f\'{e}rence 1 et 2 : Mo grav\'{e} avec CF4/O2. Cependant, MoF6 (produit de r\'{e}action) vient attaquer les parois du r\'{e}acteur. Ajout d'O2 pour am\'{e}liorer la s\'{e}lectivit\'{e}. Avec une forte pr\'{e}sence d'O2 (>50\%) COCl2 est dissoci\'{e} pour former CoCl2 + O2 => CO2 + Cl2 MoO3 : tr\`{e}s stable chimiquement, impossible \`{a} graver sans bombardement ionique important. }, journal = {Japanese Journal of Applied Physics}, keywords = {ccl4-o2, etching, molybdenum, rie}, month = {January}, number = {1}, pages = {168--172}, posted-at = {2006-03-17 15:18:32}, priority = {0}, title = {Molybdenum Etching Using CCl4/O2 Mixture Gas}, url = {http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=21&page=168&submit3=Retrieve}, volume = {21}, year = {1982} }

TY - JOUR ID - 49 L3 - citeulike-article-id:556152 N2 - Molybdenum was etched using CCl4/O2 mixture gas. Typical etch rate is about 80 nm/min, and its relative etch rate ratio to resist AZ1350J was 2: 1. Etch rates of silicon and silicon-dioxide were negligibly small, as compared to molybdenum etch rate. The dissociation process of CCl4/O2 analogous to the dissociation process in CF4/O2 mixture gas plasma was observed. Molybdenum-oxide was detected on the surface of silicon, silicon-dioxide and the resist, which were etched with molybdenum, using Auger electron spectroscopy. The deposited molybdenum-oxide increases the etch selectivity of molybdenum over underlying materials. The lateral etching rate after etching end point was about 13 nm/min, in the typical etching condition. The main reason for the pattern width narrowing in the etching was due to moderate resist slope. IS - 1 JF - Japanese Journal of Applied Physics EP - 172 TI - Molybdenum Etching Using CCl4/O2 Mixture Gas VL - 21 SP - 168 KW - ccl4-o2 KW - etching KW - molybdenum KW - rie N1 - Empilage : * Mo (300nm) / SiO2 (100nm) / Si * SiO2 (1µm) / Si Commentaires: Référence 1 et 2 : Mo gravé avec CF4/O2. Cependant, MoF6 (produit de réaction) vient attaquer les parois du réacteur. Ajout d’O2 pour améliorer la sélectivité. Avec une forte présence d’O2 (>50%) COCl2 est dissocié pour former CoCl2 + O2 => CO2 + Cl2 MoO3 : très stable chimiquement, impossible à graver sans bombardement ionique important. AU - Kurogi, Yukinori AU - Kamimura, Kazuo PY - 1982/01// UR - http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=21&page=168&submit3=Retrieve ER -