Selective Etching of HfO2 High-k Gate Material over Si in C4F8/Ar/H2 Plasmas. Export

@proceedings{10, abstract = {Inductively coupled fluocarbon plasmas were used to etch HfO2 over Si, which is a promising high dielectric constant material for the gate of complementary metal-oxide-semiconductor device...}, author = {Takahashi, Kazuo and Ono, Kouichi}, booktitle = {2004 Dry Process International Symposium}, chapter = {7-04}, citeulike-article-id = {558081}, keywords = {c4f8-ar-h2, hfo2, high-k, icp}, posted-at = {2006-03-21 07:41:44}, priority = {0}, title = {Selective Etching of HfO2 High-k Gate Material over Si in C4F8/Ar/H2 Plasmas.}, year = {2004} }

TY - CONF ID - 10 L3 - citeulike-article-id:558081 N2 - Inductively coupled fluocarbon plasmas were used to etch HfO2 over Si, which is a promising high dielectric constant material for the gate of complementary metal-oxide-semiconductor device... TI - Selective Etching of HfO2 High-k Gate Material over Si in C4F8/Ar/H2 Plasmas. T2 - 2004 Dry Process International Symposium KW - c4f8-ar-h2 KW - hfo2 KW - high-k KW - icp AU - Takahashi, Kazuo AU - Ono, Kouichi PY - 2004/// ER -