Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors Export

@article{83, author = {Li, Xu and Zhou, Haiping and Wilkinson, Chris D. W. and Thayne, Iain G.}, citeulike-article-id = {994834}, citeulike-linkout-0 = {http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=45&page=8364&list1=http://jjap.ipap.jp/journal/JJAP-45-12R.html&list2=http://jjap.ipap.jp/journal/JJAP-45-DecL.html&list3=http://jjap.ipap.jp/journal/JJAP-45-10S.html}, comment = {OES du tungsten}, journal = {Japanese Journal of Applied Physics}, keywords = {optical-emission-spectroscopy, tungsten}, number = {10B}, pages = {8364--8369}, posted-at = {2006-12-14 14:15:27}, priority = {5}, title = {Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors}, url = {http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=45&page=8364&list1=http://jjap.ipap.jp/journal/JJAP-45-12R.html&list2=http://jjap.ipap.jp/journal/JJAP-45-DecL.html&list3=http://jjap.ipap.jp/journal/JJAP-45-10S.html}, volume = {45}, year = {2006} }

TY - JOUR ID - 83 L3 - citeulike-article-id:994834 IS - 10B JF - Japanese Journal of Applied Physics EP - 8369 TI - Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors VL - 45 SP - 8364 KW - optical-emission-spectroscopy KW - tungsten N1 - OES du tungsten AU - Li, Xu AU - Zhou, Haiping AU - Wilkinson, Chris AU - Thayne, Iain PY - 2006/// UR - http://jjap.ipap.jp/cgi-bin/getarticle?magazine=JJAP&volume=45&page=8364&list1=http://jjap.ipap.jp/journal/JJAP-45-12R.html&list2=http://jjap.ipap.jp/journal/JJAP-45-DecL.html&list3=http://jjap.ipap.jp/journal/JJAP-45-10S.html ER -