these_morel's Cunge:G [15 articles] Export

Recent papers posted to these_morel's library by the author Cunge:G. You can also see everyone's Cunge:G.

	Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2174-2183. by X. Detter, R. Palla, Thomas I. Boutherin, et al.E. Pargon, G. Cunge, O. Joubert, L. Vallier posted to etching hbr overetch poly-si by these_morel on 2008-11-05 09:48:40 as
	Plasma reactor dry cleaning strategy after TiN, TaN and HfO[sub 2] etching processes [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 1. (2008), pp. 181-188. by R. Ramos, G. Cunge, O. Joubert posted to cleaning parois xps by these_morel on 2008-10-21 09:41:08 as
	Design of notched gate processes in high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2024-2031. by J. Foucher, G. Cunge, L. Vallier, O. Joubert posted to microloading notching passivation by these_morel on 2008-09-18 14:41:27 as
	Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption [My Copy] The European Physical Journal Applied Physics, Vol. 33 (2006), pp. 205-212. by M. Kogelschatz, G. Cunge, N. Sadeghi posted to absorption actinometry etching silicon by these_morel on 2008-09-05 13:27:46 as
	Enhancement of the recombination rate of Br atoms by CF[sub 4] addition and resist etching in HBr/Cl[sub 2]/O[sub 2] plasmas [My Copy] Journal of Applied Physics, Vol. 94, No. 10. (2003), pp. 6285-6290. by G. Cunge, O. Joubert, N. Sadeghi posted to cleaning introduction by these_morel on 2008-07-11 15:12:45 as
	Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas [My Copy] Microelectronic Engineering In Proceedings of the Symposium and Summer School on: Nano and Giga Challenges in Microelectronics Research and Opportunities in Russia, Vol. 69, No. 2-4. (September 2003), pp. 350-357. by O. Joubert, E. Pargon, J. Foucher, X. Detter, G. Cunge, L. Vallier posted to introduction resist-trimming by these_morel on 2008-07-11 13:38:16 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: I. Without silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 icp plasma xps by these_morel on 2008-03-05 09:16:38 as
	Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas [My Copy] Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530. by G. Cunge, M. Kogelschatz, N. Sadeghi posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as
	Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas [My Copy] Plasma Sources Science and Technology, Vol. 14, No. 2. (2005), pp. S42-S52. by G. Cunge, M. Kogelschatz, O. Joubert, N. Sadeghi posted to absorption cl2-o2 parois plasma by these_morel on 2008-03-05 09:11:32 as
	Poly-Si/TiN/HfO[sub 2] gate stack etching in high-density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3. (2007), pp. 767-778. by A. Le Gouil, O. Joubert, G. Cunge, et al.T. Chevolleau, L. Vallier, B. Chenevier, I. Matko posted to effet-de-charge etching poly-si tin xps by these_morel on 2008-03-05 09:03:24 as
	Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 3. (2004), pp. 553-563. by O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz, E. Pargon posted to floating_sample plasma xps by these_morel on 2007-10-08 14:47:12 as
	New chamber walls conditioning and cleaning strategies to improve the stability of plasma processes [My Copy] Plasma Sources Science and Technology, Vol. 14 (2005), pp. 599-609. by G. Cunge, B. Pelissier, O. Joubert, R. Ramos, C. Maurice posted to parois xps by these_morel on 2007-08-03 10:36:20 as
	Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148. by G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, N. Sadeghi posted to etching hbr-cl2-o2 mass-spectrometry silicon by these_morel on 2007-03-21 16:14:22 as
	Mass spectrometry studies of resist trimming processes in HBr/O[sub 2] and Cl[sub 2]/O[sub 2] chemistries [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1. (2005), pp. 103-112. by E. Pargon, O. Joubert, T. Chevolleau, G. Cunge, Songlin Xu, Thorsten Lill posted to cl2-o2 hbr-o2 icp mass-spectrometry resist-trimming by these_morel on 2006-03-21 11:34:47 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's Cunge:G [15 articles] Export

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