these_morel's Hu:C [7 articles] Export Sort

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	Deep-submicrometer MOS device fabrication using a photoresist-ashing technique [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 9, No. 4. (1988), pp. 186-188. by J. Chung, M. Jeng, J. E. Moon, et al.A. T. Wu, T. Y. Chan, P. K. Ko, C. Hu posted to introduction resist-trimming by these_morel on 2008-07-11 13:24:20 as
	Molybdenum metal gate MOS technology for post-SiO<sub>2</sub> gate dielectrics [My Copy] Electron Devices Meeting, 2000. IEDM Technical Digest. International In Electron Devices Meeting, 2000. IEDM Technical Digest. International (2000), pp. 641-644. by Qiang Lu, R. Lin, P. Ranade, et al.Yee C. Yeo, Xiaofan Meng, H. Takeuchi, Tsu-Jae King, Chenming Hu, Hongfa Luan, Songjoo Lee, Weiping Bai, Choong-Ho Lee, Dim-Lee Kwong, Xin Guo, Xiewen Wang, Tso-Ping Ma posted to dual-metal-gate metal-gate molybdenum nitrogen by these_morel on 2008-05-21 12:01:46 as
	Dual-metal gate technology for deep-submicron CMOS transistors [My Copy] VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on In VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on (2000), pp. 72-73. by Qiang Lu, Yee C. Yeo, P. Ranade, et al.H. Takeuchi, Tsu-Jae King, Chenming Hu, S. C. Song, H. F. Luan, Dim-Lee Kwong, Dim-Lee Kwong posted to dual-metal-gate molybdenum tin by these_morel on 2008-05-21 07:18:20 as
	Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 18, No. 12. (1997), pp. 580-582. by A. Gupta, Peng Fang, M. Song, et al.Ming-Ren Lin, D. Wollesen, K. Chen, C. Hu posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 12:55:02 as
	Polysilicon gate depletion effect on IC performance [My Copy] Solid-State Electronics, Vol. 38, No. 11. (November 1995), pp. 1975-1977. by Kai Chen, Mansun Chan, Ping K. Ko, Chenming Hu, Jian-Hui Huang posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 08:06:41 as
	Gate oxide scaling limits and projection [My Copy] Electron Devices Meeting, 1996., International In Electron Devices Meeting, 1996., International (1996), pp. 319-322. by Chenming Hu posted to eot introduction microelectronics polydepletion tunneling by these_morel on 2008-05-15 15:45:00 as
	Novel dual-metal gate technology using Mo-MoSi/sub x/ combination [My Copy] Electron Devices, IEEE Transactions on, Vol. 53, No. 6. (2006), pp. 1420-1426. by Tzung-Lin Li, Wu-Lin Ho, Hung-Bin Chen, H. C. H. Wang, Chun-Yen Chang, Chenming Hu posted to dual-metal-gate mosi molybdenum by these_morel on 2006-12-14 14:07:24 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
tungsten-nitride	15
icp	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
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silicon	9
metal	9
mass-spectrometry	9
cf4	9
fluorocarbon	8
parois	8
metal-gate	8
tin	7
passivation	7
molybdenum	7
absorption	7
cf4-o2	7
fluorine	7
polydepletion	6
sf6	6
reactor	6
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cmos	5
titane_nitride	5
notching	5
resist-trimming	5
tan	5
sf6-n2	5
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sf6-o2	5
annexes	4
sio2	4
hbr-cl2-o2	4
bcl3	4
oxidation	4
nf3	4
ecr	4
wet-etching	4
effet-de-charge	3
volatility	3
ar	3
zro2	3
recess	3
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dual-metal-gate	3
dissociation	3
tungsten-oxide	3
work-function	3
tem	3
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temperature	3
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optical-emission-spectroscopy	3
nitrogen	3
nf3-o2	2
hfalo	2
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wocl	2
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xrr	2
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thomas	1
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morel	1
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vlsi	1
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interconnections	1
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zralo	1
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co2	1
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pulverisation	1
wco6	1
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mosi	1
chf3-cl2-bcl3	1
sf6-ar-cl2	1
dhf	1
time-delay-effect	1
angle	1
hfon	1
eot	1
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co	1
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tcp_9400	1
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these_morel's Hu:C [7 articles] Export Sort

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