CiteULike: these_morel's Kogelschatz:M [5 articles]

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	Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption [My Copy] The European Physical Journal Applied Physics, Vol. 33 (2006), pp. 205-212. by M. Kogelschatz, G. Cunge, N. Sadeghi posted to absorption actinometry etching silicon by these_morel on 2008-09-05 13:27:46 as
	Etude des interactions plasma–surface pendant la gravure du silicium dans des plasmas HBr/Cl2/O2 [My Copy] (2004) by Martin Kogelschatz posted to dispositifs-experimentaux introduction plasma by these_morel on 2008-08-11 10:27:20 as
	Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas [My Copy] Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530. by G. Cunge, M. Kogelschatz, N. Sadeghi posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as
	Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas [My Copy] Plasma Sources Science and Technology, Vol. 14, No. 2. (2005), pp. S42-S52. by G. Cunge, M. Kogelschatz, O. Joubert, N. Sadeghi posted to absorption cl2-o2 parois plasma by these_morel on 2008-03-05 09:11:32 as
	Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 3. (2004), pp. 553-563. by O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz, E. Pargon posted to floating_sample plasma xps by these_morel on 2007-10-08 14:47:12 as

plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
tungsten-nitride	15
icp	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
dielectric	9
silicon	9
metal	9
mass-spectrometry	9
cf4	9
fluorocarbon	8
parois	8
metal-gate	8
tin	7
passivation	7
molybdenum	7
absorption	7
cf4-o2	7
fluorine	7
polydepletion	6
sf6	6
reactor	6
plasmas	6
cmos	5
titane_nitride	5
notching	5
resist-trimming	5
tan	5
sf6-n2	5
wsi	5
hbr	5
sf6-ar	5
cleaning	5
sf6-o2	5
annexes	4
sio2	4
hbr-cl2-o2	4
bcl3	4
oxidation	4
nf3	4
ecr	4
wet-etching	4
effet-de-charge	3
volatility	3
ar	3
zro2	3
recess	3
chemical-vapor-deposition	3
decomposition	3
dual-metal-gate	3
dissociation	3
tungsten-oxide	3
work-function	3
tem	3
resistivity	3
temperature	3
tunneling	3
optical-emission-spectroscopy	3
nitrogen	3
nf3-o2	2
hfalo	2
ruthenium	2
titanium	2
deposition	2
doping	2
o2	2
wcl	2
wocl	2
wsix	2
xrr	2
materials	2
chf3	2
polymer_layer	2
c4f8	2
arxps	2
meb	2
microloading	2
hbr-o2	2
bcl3-o2	2
sicl4-cl2	2
cf4-cl2	2
incorporation	2
helicon-plasma	2
cl2-nf3-o2	2
n2	1
thomas	1
hf	1
cf3-cl	1
gravure	1
photoresist	1
nf3-he	1
morel	1
sputter-deposition	1
negative-ion	1
taper	1
c4f8-ar-h2	1
45nm	1
cbrf3	1
dry-etching	1
line-edge-roughness	1
midgap	1
eels	1
tungstene	1
nf3-h2	1
vlsi	1
wcl4	1
hfsio	1
hfn	1
hfsion	1
interconnections	1
oxygen	1
microelectronique	1
3d-integration	1
magnetoplasma	1
silicidation	1
zralo	1
overetch	1
co2	1
bowing	1
gate-patterning	1
pulverisation	1
wco6	1
etchback	1
neural-networks	1
mosi	1
chf3-cl2-bcl3	1
sf6-ar-cl2	1
dhf	1
time-delay-effect	1
angle	1
hfon	1
eot	1
floating_sample	1
co	1
tac	1
new-devices	1
microtrenching	1
aluminium	1
ccl4-o2	1
moores-law	1
wiggling	1
molecular-beam-system	1
damage	1
clo	1
masking-materials	1
nh3	1
eftem	1
selectivity	1
lpcvd	1
uhf-ecr	1
tcp_9400	1
sf6-chf3	1
deformation-resist	1
tcp	1
lam	1
capacitive	1
interferometry	1

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