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Anomalous C-V characteristics of implanted polyMOS structure in n+/p+ dual-gate CMOS technology

Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 10, No. 5. (1989), pp. 192-194.

by C. Y. Lu, J. M. Sung, H. C. Kirsch, S. J. Hillenius, T. E. Smith, L. Manchanda

posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 07:55:26 as

Etching of high-k dielectric Zr[sub 1 - x]Al[sub x]O[sub y] films in chlorine-containing plasmas

The 47th international symposium: Vacuum, thin films, surfaces/interfaces, and processing NAN06, Vol. 19, No. 4. (2001), pp. 1361-1366.

by K. Pelhos, V. M. Donnelly, A. Kornblit, et al.M. L. Green, R. B. Van Dover, L. Manchanda, Y. Hu, M. Morris, E. Bower

posted to bcl3 cl2 dielectric high-k zralo by these_morel on 2006-02-21 09:50:49 as

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plasma	54
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introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
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cl2	15
tungsten-nitride	15
icp	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
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silicon	9
metal	9
mass-spectrometry	9
cf4	9
fluorocarbon	8
parois	8
metal-gate	8
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passivation	7
molybdenum	7
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cf4-o2	7
fluorine	7
polydepletion	6
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titane_nitride	5
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resist-trimming	5
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sf6-o2	5
annexes	4
sio2	4
hbr-cl2-o2	4
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oxidation	4
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wet-etching	4
effet-de-charge	3
volatility	3
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dual-metal-gate	3
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work-function	3
tem	3
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temperature	3
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nitrogen	3
nf3-o2	2
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wocl	2
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gravure	1
photoresist	1
nf3-he	1
morel	1
sputter-deposition	1
negative-ion	1
taper	1
c4f8-ar-h2	1
45nm	1
cbrf3	1
dry-etching	1
line-edge-roughness	1
midgap	1
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tungstene	1
nf3-h2	1
vlsi	1
wcl4	1
hfsio	1
hfn	1
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interconnections	1
oxygen	1
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3d-integration	1
magnetoplasma	1
silicidation	1
zralo	1
overetch	1
co2	1
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pulverisation	1
wco6	1
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eot	1
floating_sample	1
co	1
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these_morel's Manchanda:L [2 articles] Export Sort

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