these_morel's etching [48 articles] Export

Recent papers added to these_morel's library classified by the tag etching. You can also see everyone's etching.

	Gravure ionique réactive des couches minces de tungstène en plasmas radiofréquence de SF6/O2 [My Copy] (1993) by Marie-Claude Peignon posted to etching mass-spectrometry sf6-o2 tungsten by these_morel on 2008-12-08 07:11:53 as
	Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2174-2183. by X. Detter, R. Palla, Thomas I. Boutherin, et al.E. Pargon, G. Cunge, O. Joubert, L. Vallier posted to etching hbr overetch poly-si by these_morel on 2008-11-05 09:48:40 as
	Silicon doping effects in reactive plasma etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 468-475. by Young H. Lee, Mao M. Chen posted to doping etching plasma silicon by these_morel on 2008-09-16 15:30:03 as
	Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption [My Copy] The European Physical Journal Applied Physics, Vol. 33 (2006), pp. 205-212. by M. Kogelschatz, G. Cunge, N. Sadeghi posted to absorption actinometry etching silicon by these_morel on 2008-09-05 13:27:46 as
	Silicon etching mechanisms in a CF[sub 4]/H[sub 2] glow discharge [My Copy] Journal of Applied Physics, Vol. 62, No. 2. (1987), pp. 662-672. by Gottlieb S. Oehrlein, Holly L. Williams posted to cf4 etching fluorocarbon silicon by these_morel on 2008-09-04 13:20:25 as
	Highly Anisotropic Etching of Tungsten-Nitride for an X-Ray Mask Absorber with an Inductively Coupled Plasma System [My Copy] Japanese Journal of Applied Physics, Vol. 37 (1998), pp. 6819-6823. by Hong G. Lee, Seung Y. Lee, Ho S. Moon, Sang H. Kim, Joo-Hiuk S. Sohn, Jinho Ahn posted to etching icp sf6-ar sf6-n2 tungsten-nitride by these_morel on 2008-08-25 12:23:31 as
	Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices [My Copy] Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 286-288. by A. Katz, S. J. Pearton, M. Geva posted to ecr etching tungsten by these_morel on 2008-08-20 12:58:34 as
	Highly anisotropic etching of submicrometer features on tungsten [My Copy] Journal of Applied Physics, Vol. 78, No. 11. (1995), pp. 6780-6783. by F. Bounasri, E. Gat, M. Chaker, M. Moisan, J. Margot, M. F. Ravet posted to etching magnetoplasma tungsten by these_morel on 2008-08-20 12:56:04 as
	Étude et développement de procédés de gravure plasma pour l’élaboration des grilles métalliques pour les filières technologiques CMOS : Cas de l’empilement Si/TiN/HfO2 [My Copy] (2006) by Anne Le Gouil posted to etching metal-gate tin by these_morel on 2008-08-11 10:05:10 as
	Dry etching for pattern transfer [My Copy] Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183. by H. W. Lehmann, R. Widmer posted to etching introduction plasma by these_morel on 2008-07-09 10:18:03 as
	Plasma Etching of Refractory Gates for VLSI Applications [My Copy] Journal of the Electrochemical Society, Vol. 131, No. 10. (1984), 2325. by T. P. Chow, A. J. Steckl posted to etching plasma tungsten by these_morel on 2008-04-23 09:10:58 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as
	Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas [My Copy] Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530. by G. Cunge, M. Kogelschatz, N. Sadeghi posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as
	Poly-Si/TiN/HfO[sub 2] gate stack etching in high-density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3. (2007), pp. 767-778. by A. Le Gouil, O. Joubert, G. Cunge, et al.T. Chevolleau, L. Vallier, B. Chenevier, I. Matko posted to effet-de-charge etching poly-si tin xps by these_morel on 2008-03-05 09:03:24 as
	Reactive Ion Etching of Tungsten with Chlorinated Fluorocarbons [My Copy] Journal of Electrochemical Society, Vol. 136, No. 10. (October 1989), pp. 2973-2979. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to actinometry cl2 etching fluorocarbon rie tungsten by these_morel on 2008-03-05 08:48:01 as
	The Kinetics of Tungsten Etching by Atomic and Molecular Chlorine [My Copy] Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2090-2095. by M. Balooch, D. S. Fischl, D. R. Olander posted to cl2 etching plasma tungsten by these_morel on 2008-03-05 08:44:22 as
	Thin gate oxide behavior during plasma patterning of silicon gates [My Copy] Applied Physics Letters, Vol. 75, No. 8. (1999), pp. 1069-1070. by L. Vallier, L. Desvoivres, M. Bonvalot, O. Joubert posted to etching oxidation recess silicon by these_morel on 2008-01-03 13:49:54 as
	Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2205-2211. by S. A. Vitale, B. A. Smith posted to etching oxidation recess silicon by these_morel on 2007-12-20 14:56:17 as
	Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products [My Copy] Plasma Chemistry and Plasma Processing, Vol. 5, No. 4. (1 December 1985), pp. 333-351. by A. Picard, G. Turban posted to etching mass-spectrometry molybdenum sf6-o2 tungsten by these_morel on 2007-03-30 15:41:30 as
	Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148. by G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, N. Sadeghi posted to etching hbr-cl2-o2 mass-spectrometry silicon by these_morel on 2007-03-21 16:14:22 as
	Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition [My Copy] Japanese Journal of Applied Physics, Vol. 45, No. 10. (2006), pp. L297-L300. by Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono posted to bcl3-o2 etching hfo2 by these_morel on 2006-12-14 14:30:07 as
	TiN Etching and Its Effects on Tungsten Etching in SF6/Ar Helicon Plasma [My Copy] Japanese Journal of Applied Physics, Vol. 37, No. 3A. (1998), pp. 801-806. by Chang J. Choi, Yeo S. Seol, Ki-Ho Baik posted to etching sf6-ar titane_nitride tungsten by these_morel on 2006-12-14 14:19:37 as
	Anisotropic dry etching of submicron W features using a Ti mask [My Copy] Semiconductor Science and Technology, Vol. 7, No. 12. (1992), pp. 1489-1494. by T. R. Fullowan, S. J. Pearton, F. Ren, G. E. Mahoney, R. L. Kostelak posted to cf4 etching sf6 tungsten by these_morel on 2006-12-14 14:09:51 as
	$My PDF fracassi_95_dry.pdf$ Dry etching of titanium nitride thin films in CF[sub 4]--O[sub 2] plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, No. 2. (1995), pp. 335-342. by F. Fracassi, R. D'agostino, R. Lamendola, I. Mangieri posted to cf4-o2 etching titane_nitride xps by these_morel on 2006-12-13 15:42:58 as
	Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697. by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara posted to etching fluorocarbon hfo2 plasma xps by these_morel on 2006-12-13 15:40:29 as
	Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443. by Kazuo Takahashi, Kouichi Ono posted to etching fluorocarbon hfo2 plasmas xps by these_morel on 2006-12-13 15:38:19 as
	30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to c4f8 etching icp sf6 tungsten by these_morel on 2006-07-26 12:51:56 as along with 1 person Stanley_vrc
	The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers [My Copy] Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150. by H. C. Lee, S. Vanhaelemeersch posted to cl2 etching masking-materials sf6-ar tungsten by these_morel on 2006-06-19 09:39:31 as along with 1 person Stanley_vrc
	A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel on 2006-06-19 09:36:54 as along with 1 person Stanley_vrc
	Temperature Effect on Tungsten Etching Using a Cl2/O2 Helicon Discharge [My Copy] Journal of the Korean Physical Society, Vol. 43, No. 4. (October 2003), pp. 526-528. by Hyoun W. Kim posted to cl2-o2 etching helicon-plasma temperature tungsten by these_morel on 2006-03-21 12:00:53 as along with 1 person Stanley_vrc
	Analyse des mécanismes mis en jeu lors de l’élaboration par gravure plasma de structures de dimension nanométrique : Application au transistor CMOS ultime. [My Copy] (3 December 2004) by Erwin Pargon posted to etching plasma by these_morel on 2006-03-21 07:17:37 as
	Gravure de la grille en silicium pour les filières CMOS sub-0,1µm. [My Copy] (17 November 2000) by Latifa El-Kortobi-Desvoivres posted to etching by these_morel on 2006-03-21 07:11:33 as
	Molybdenum Etching Using CCl4/O2 Mixture Gas [My Copy] Japanese Journal of Applied Physics, Vol. 21, No. 1. (January 1982), pp. 168-172. by Yukinori Kurogi, Kazuo Kamimura posted to ccl4-o2 etching molybdenum rie by these_morel on 2006-03-17 15:18:32 as
	Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs [My Copy] Electron Devices, IEEE Transactions on, Vol. 51, No. 12. (2004), pp. 1989-1996. by Daewon Ha, H. Takeuchi, Yang-Kyu Choi, Tsu-Jae King posted to cl2-o2 etching molybdenum tcp_9400 by these_morel on 2006-03-17 15:12:21 as
	Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3. (1995), pp. 914-917. by Sung K. Kwon, Kyung N. Kim, Chul W. Nam, Seong I. Woo posted to cf4-o2 co co2 etching plasmas rie tungsten by these_morel on 2006-03-03 12:35:35 as
	Role of oxygen in ion-enhanced etching of poly-Si and WSi[sub x] with chlorine [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2215-2221. by Gowri P. Kota, J. W. Coburn, David B. Graves posted to cl2 etching molecular-beam-system poly-si wsi by these_morel on 2006-02-28 15:06:32 as
	Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042. by Masaaki Sato, Yoshinobu Arita posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as
	Study of W/Ti triode plasma etching [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, No. 5. (1992), pp. 3076-3085. by J. F. Coulon, G. Turban, P. Rabinzohn, L. Jeannerot posted to etching plasmas sf6-n2 sicl4-cl2 titanium tungsten by these_morel on 2006-02-28 15:02:41 as
	Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191. by S. C. Mcnevin posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as
	Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041. by Gottlieb S. Oehrlein, Lennart J. Lindstom posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as
	Ion-bombardment-enhanced plasma etching of tungsten with NF[sub 3]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 5. (1988), pp. 1570-1572. by W. M. Greene, D. W. Hess, W. G. Oldham posted to etching nf3-o2 plasma tungsten by these_morel on 2006-02-28 14:45:35 as
	Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40. by M. Helot, T. Chevolleau, L. Vallier, et al.O. Joubert, E. Blanquet, A. Pisch, P. Mangiagalli, T. Lill posted to cl2 dielectric etching hfo2 high-k by these_morel on 2006-02-21 09:56:36 as
	Plasma etching selectivity of ZrO[sub 2] to Si in BCl[sub 3]/Cl[sub 2] plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, No. 6. (2003), pp. 1915-1922. by Lin Sha, Jane P. Chang posted to bcl3 cl2 etching high-k zro2 by these_morel on 2006-02-21 09:40:20 as along with 2 people blswenson newmansc
	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma [My Copy] Vol. 23, No. 4. (2005), pp. 964-970. by Wan S. Hwang, Jinghao Chen, Won J. Yoo, Vladimir Bliznetsov posted to etching hbr-cl2-o2 hfn icp nitrogen optical-emission-spectroscopy tan tin volatility by these_morel on 2006-02-17 15:42:40 as
	Effect of hydrogen peroxide on hydrofluoric acid etching of high-k materials: ESR investigations [My Copy] Journal of Non-Crystalline Solids In Papers from the Michael Weinberg Symposium, Vol. 351, No. 18. (15 June 2005), pp. 1559-1564. by V. Lowalekar, S. Raghavan posted to dielectric etching high-k materials by these_morel on 2006-02-17 15:36:47 as
	Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553. by C. Wang, V. M. Donnelly posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as
	Effects of Nitrogen Additive Gas on Sidewall Passivation in W/TiN/High-k Dielectric Gate Etching [My Copy] Microprocesses and Nanotechnology Conference, 2000 International (2000), pp. 210-211. by Jae-Young Kim, Yu-Kwon Kim, Kwang-Ok Kim, Chang J. Choi, Jin W. Kim posted to dielectric etching gate high-k metal tin tungsten by these_morel on 2006-02-17 13:47:00 as
	Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas [My Copy] Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79. by Mutumi Tuda, Kenji Shintani, Junji Tanimura posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as

Note: You may cite this page as: http://www.citeulike.org/user/these_morel/tag/etching

plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's etching [48 articles] Export

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