these_morel's hfo2 [19 articles] Export

Recent papers added to these_morel's library classified by the tag hfo2. You can also see everyone's hfo2.

	Mechanism of Interstitial Oxygen Diffusion in Hafnia [My Copy] Physical Review Letters, Vol. 89, No. 22. (12 November 2002), 225901. by A. S. Foster, A. L. Shluger, R. M. Nieminen posted to hfo2 oxygen by these_morel on 2008-10-17 09:52:39 as
	CROISSANCE DE DIELECTRIQUE A FORTE PERMITTIVITE PAR LA TECHNIQUE MOCVD EN PHASE LIQUIDE PULSEE : ELABORATION ET CARACTERISATION DE FILMS DE HfO2 [My Copy] (2006) by Karen Dabertrand posted to hfo2 introduction by these_morel on 2008-08-11 10:07:59 as
	Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS [My Copy] Electron Devices Meeting, 2006. IEDM '06. International In Electron Devices Meeting, 2006. IEDM '06. International (2006), pp. 1-4. by W. J. Taylor, C. Capasso, B. Min, et al.B. Winstead, E. Verret, K. Loiko, D. Gilmer, R. I. Hegde, J. Schaeffer, J. Schaeffer, E. Luckowski, A. Martinez, M. Raymond, C. Happ, D. H. Triyoso, S. Kalpat, A. Haggag, D. Roan, J. Y. Nguyen, L. B. La, L. Hebert, J. Smith, D. Jovanovic, D. Burnett, M. Foisy, N. Cave, P. J. Tobin, S. B. Samavedam, Jr, S. Venkatesan posted to hfo2 high-k metal-gate tac by these_morel on 2008-05-21 07:12:22 as
	Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition [My Copy] Japanese Journal of Applied Physics, Vol. 45, No. 10. (2006), pp. L297-L300. by Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, Kazuo Takahashi, Kouichi Ono posted to bcl3-o2 etching hfo2 by these_morel on 2006-12-14 14:30:07 as
	Improvement in high-k (HfO/sub 2//SiO/sub 2/) reliability by incorporation of fluorine [My Copy] Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International (2005), 4 pp.. by K. Seo, R. Sreenivasan, P. C. Mclntyre, K. C. Saraswat posted to fluorine hfo2 incorporation by these_morel on 2006-12-14 14:01:11 as
	Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697. by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara posted to etching fluorocarbon hfo2 plasma xps by these_morel on 2006-12-13 15:40:29 as
	Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443. by Kazuo Takahashi, Kouichi Ono posted to etching fluorocarbon hfo2 plasmas xps by these_morel on 2006-12-13 15:38:19 as
	Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma. [My Copy] Japanese Journal of Applied Physics, Vol. 44, No. 7B. (2005), pp. 5811-5818. by Myoung H. Shin, Sung W. Na, Nae E. Lee, et al.Tae K. Oh, Jiyoung Kim, Taeho Lee, Jinho Ahn posted to hfo2 sf6-ar-cl2 tan xps by these_morel on 2006-08-04 08:47:29 as
	Etching of High-k Dielectric HfO2 Films in BCl3-Containing Plasmas Enhanced with O2 Addition [My Copy] Japanese Journal of Applied Physics, Vol. 45, No. 10. (2006), pp. L297-L300. by Tomohiro Kitagawa, Keisuke Nakamura, Kazushi Osari, et al.Kazuo Takahashi, Kouichi Ono, Masanori Oosawa, Satoshi Hasaka, Minoru Inoue posted to bcl3-o2 ecr hfo2 high-k by these_morel on 2006-03-21 14:13:03 as along with 2 people Stanley_vrc gramcd
	Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries. [My Copy] Japanese Journal of Applied Physics, Vol. 43, No. 4B. (April 2004), pp. 1864-1868. by Takeshi Maeda, Hiroyuki Ito, Riichiro Mitsuhashi, et al.Atsushi Horiuchi, Takaaki Kawahara, Akiyoshi Muto, Takaoki Sasaki, Kazuyoshi Torii, Hiroshi Kitajima posted to cf4 cl2 damage dhf dry-etching gate-patterning hbr hfo2 high-k wet-etching by these_morel on 2006-03-21 07:54:24 as along with 1 person molli0rm
	Selective Etching of HfO2 High-k Gate Material over Si in C4F8/Ar/H2 Plasmas. [My Copy] In 2004 Dry Process International Symposium (2004) by Kazuo Takahashi, Kouichi Ono posted to c4f8-ar-h2 hfo2 high-k icp by these_morel on 2006-03-21 07:41:44 as
	Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40. by M. Helot, T. Chevolleau, L. Vallier, et al.O. Joubert, E. Blanquet, A. Pisch, P. Mangiagalli, T. Lill posted to cl2 dielectric etching hfo2 high-k by these_morel on 2006-02-21 09:56:36 as
	Plasma etching of high dielectric constant materials on silicon in halogen chemistries [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 88-95. by Lin Sha, Jane P. Chang posted to bcl3 cl2 hfo2 high-k zro2 by these_morel on 2006-02-21 09:44:45 as
	Ion-enhanced chemical etching of HfO[sub 2] for integration in metal--oxide--semiconductor field effect transistors [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6. (2003), pp. 2420-2427. by Lin Sha, Ragesh Puthenkovilakam, You S. Lin, Jane P. Chang posted to dielectric hfo2 high-k by these_morel on 2006-02-21 09:36:28 as
	Etch characteristics of HfO2 films on Si substrates [My Copy] Applied Surface Science, Vol. 187, No. 1-2. (14 February 2002), pp. 75-81. by S. Norasetthekul, P. Y. Park, K. H. Baik, et al.K. P. Lee, J. H. Shin, B. S. Jeong, V. Shishodia, D. P. Norton, S. J. Pearton posted to dielectric hfo2 high-k by these_morel on 2006-02-21 09:28:42 as
	Plasma etching of high-k and metal gate materials [My Copy] Vacuum, Vol. In Press, Corrected Proof by Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, Kouichi Ono posted to ecr hfo2 high-k metal by these_morel on 2006-02-17 15:39:06 as
	Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553. by C. Wang, V. M. Donnelly posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as
	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 4. (2004), pp. 1552-1558. by Jinghao Chen, Won J. Yoo, Zerlinda Y. L. Tan, Yingqian Wang, Daniel S. H. Chan posted to cl2-o2 fluorine hbr-o2 hfalo hfo2 hfon hfsio high-k xps by these_morel on 2006-02-17 15:12:43 as
	Effects of Annealing and Ar Ion Bombardment on the Removal of HfO[sub 2] Gate Dielectric [My Copy] Electrochemical and Solid-State Letters, Vol. 7, No. 3. (2004), pp. F18-F20. by Jinghao Chen, Won J. Yoo, Daniel S. H. Chan, Dim L. Kwong posted to ar hf hfo2 high-k icp plasma wet-etching by these_morel on 2006-02-17 15:00:46 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's hfo2 [19 articles] Export

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