these_morel's icp [15 articles] Export

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	Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas [My Copy] Thin Solid Films In Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, Vol. 447-448 (30 January 2004), pp. 586-591. by S. D. Park, Y. J. Lee, N. G. Cho, et al.S. G. Kim, H. H. Choe, M. P. Hong, G. Y. Yeom posted to ar cf4-cl2 icp n2 o2 tungsten by these_morel on 2008-09-19 09:57:32 as
	Highly Anisotropic Etching of Tungsten-Nitride for an X-Ray Mask Absorber with an Inductively Coupled Plasma System [My Copy] Japanese Journal of Applied Physics, Vol. 37 (1998), pp. 6819-6823. by Hong G. Lee, Seung Y. Lee, Ho S. Moon, Sang H. Kim, Joo-Hiuk S. Sohn, Jinho Ahn posted to etching icp sf6-ar sf6-n2 tungsten-nitride by these_morel on 2008-08-25 12:23:31 as
	A simple analysis of an inductive RF discharge [My Copy] Plasma Sources Science and Technology, Vol. 1, No. 3. (1992), pp. 179-186. by R. B. Piejak, V. A. Godyak, B. M. Alexandrovich posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:31:10 as
	Application of a low-pressure radio frequency discharge source to polysilicon gate etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 1. (1990), pp. 1-4. by J. M. Cook, D. E. Ibbotson, D. L. Flamm posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:30:18 as
	Review of inductively coupled plasmas for plasma processing [My Copy] Plasma Sources Science and Technology, Vol. 1, No. 2. (1992), pp. 109-116. by J. Hopwood posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:29:26 as
	Determination of electromagnetic properties of low-pressure electrodeless inductive discharges [My Copy] Journal of Physics D: Applied Physics, Vol. 23, No. 3. (1990), pp. 293-298. by J. W. Denneman posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:28:16 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: I. Without silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 icp plasma xps by these_morel on 2008-03-05 09:16:38 as
	30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to c4f8 etching icp sf6 tungsten by these_morel on 2006-07-26 12:51:56 as along with 1 person Stanley_vrc
	CF/sub 4/ decomposition using inductively coupled plasma: effect of power frequency [My Copy] Industry Applications, IEEE Transactions on, Vol. 41, No. 1. (2005), pp. 215-220. by T. Kuroki, J. Mine, M. Okubo, T. Yamamoto, N. Saeki posted to cf4-o2 decomposition icp by these_morel on 2006-06-19 10:21:45 as
	Mass spectrometry studies of resist trimming processes in HBr/O[sub 2] and Cl[sub 2]/O[sub 2] chemistries [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1. (2005), pp. 103-112. by E. Pargon, O. Joubert, T. Chevolleau, G. Cunge, Songlin Xu, Thorsten Lill posted to cl2-o2 hbr-o2 icp mass-spectrometry resist-trimming by these_morel on 2006-03-21 11:34:47 as
	Selective Etching of HfO2 High-k Gate Material over Si in C4F8/Ar/H2 Plasmas. [My Copy] In 2004 Dry Process International Symposium (2004) by Kazuo Takahashi, Kouichi Ono posted to c4f8-ar-h2 hfo2 high-k icp by these_morel on 2006-03-21 07:41:44 as
	Plasma induced 193-nm Resist Deformation: Problems and a Possible Solution. [My Copy] In 2004 Dry Process International Symposium (2004) by H. Stryuf, Q. T. Le, T. Dupont, W. Boullart, S. Vanhaelemeersch posted to deformation-resist hbr icp plasma by these_morel on 2006-03-21 07:38:15 as
	High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon [My Copy] Papers from the 44th international conference on electron, ion, and photon beam technology and nanofabrication, Vol. 18, No. 6. (2000), pp. 3471-3475. by Andrew L. Goodyear, Sinclair Mackenzie, Deirdre L. Olynick, Erik H. Anderson posted to icp sf6-o2 temperature tungsten by these_morel on 2006-02-28 15:13:45 as
	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma [My Copy] Vol. 23, No. 4. (2005), pp. 964-970. by Wan S. Hwang, Jinghao Chen, Won J. Yoo, Vladimir Bliznetsov posted to etching hbr-cl2-o2 hfn icp nitrogen optical-emission-spectroscopy tan tin volatility by these_morel on 2006-02-17 15:42:40 as
	Effects of Annealing and Ar Ion Bombardment on the Removal of HfO[sub 2] Gate Dielectric [My Copy] Electrochemical and Solid-State Letters, Vol. 7, No. 3. (2004), pp. F18-F20. by Jinghao Chen, Won J. Yoo, Daniel S. H. Chan, Dim L. Kwong posted to ar hf hfo2 high-k icp plasma wet-etching by these_morel on 2006-02-17 15:00:46 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's icp [15 articles] Export

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