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	Modulation du travail de sortie de grilles métalliques totalement siliciurées pour des dispositifs CMOS déca-nanométriques. [My Copy] (2007) by Delphine Aime posted to introduction polydepletion work-function by these_morel on 2008-10-27 09:19:02 as
	Complete re-estimation of the gate leakage current limit for sub-0.12um technologies (EOT= 1.8-2.8nm) [My Copy] Solid-State Device Research Conference, 2000. Proceeding of the 30th European In Solid-State Device Research Conference, 2000. Proceeding of the 30th European (2000), pp. 304-307. by M. Bidaud, F. Arnaud, J. L. Autran, K. Barla posted to introduction tunneling by these_morel on 2008-10-01 09:22:34 as
	Etude, fabrication et propriétés de transport de transistors CMOS associant un diélectrique haute permittivité et un canal de conduction haute mobilité [My Copy] (2005) by Olivier Weber posted to cmos introduction by these_morel on 2008-09-08 12:43:36 as
	Etude des interactions plasma–surface pendant la gravure du silicium dans des plasmas HBr/Cl2/O2 [My Copy] (2004) by Martin Kogelschatz posted to dispositifs-experimentaux introduction plasma by these_morel on 2008-08-11 10:27:20 as
	CROISSANCE DE DIELECTRIQUE A FORTE PERMITTIVITE PAR LA TECHNIQUE MOCVD EN PHASE LIQUIDE PULSEE : ELABORATION ET CARACTERISATION DE FILMS DE HfO2 [My Copy] (2006) by Karen Dabertrand posted to hfo2 introduction by these_morel on 2008-08-11 10:07:59 as
	Plasma etching: principles, mechanisms, application to micro- and nano-technologies [My Copy] Applied Surface Science, Vol. 164, No. 1-4. (1 September 2000), pp. 72-83. by Christophe Cardinaud, Marie-Claude Peignon, Pierre-Yves Tessier posted to introduction metal volatility by these_morel on 2008-07-18 12:38:24 as
	VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition [My Copy] (14 March 1994) by Sorab K. Ghandhi posted to introduction volatility by these_morel on 2008-07-18 10:44:54 as
	Enhancement of the recombination rate of Br atoms by CF[sub 4] addition and resist etching in HBr/Cl[sub 2]/O[sub 2] plasmas [My Copy] Journal of Applied Physics, Vol. 94, No. 10. (2003), pp. 6285-6290. by G. Cunge, O. Joubert, N. Sadeghi posted to cleaning introduction by these_morel on 2008-07-11 15:12:45 as
	Effect of chamber wall conditions on Cl and Cl[sub 2] concentrations in an inductively coupled plasma reactor [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 1. (2002), pp. 43-52. by Saurabh J. Ullal, Anna R. Godfrey, Erik Edelberg, Linda Braly, Vahid Vahedi, Eray S. Aydil posted to cleaning introduction by these_morel on 2008-07-11 15:11:51 as
	Characteristics and mechanism of etch process sensitivity to chamber surface condition [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 1. (2001), pp. 166-171. by Songlin Xu, Zhiwen Sun, Xueyu Qian, John Holland, Dragan Podlesnik posted to cleaning introduction by these_morel on 2008-07-11 15:10:19 as
	Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas [My Copy] Microelectronic Engineering In Proceedings of the Symposium and Summer School on: Nano and Giga Challenges in Microelectronics Research and Opportunities in Russia, Vol. 69, No. 2-4. (September 2003), pp. 350-357. by O. Joubert, E. Pargon, J. Foucher, X. Detter, G. Cunge, L. Vallier posted to introduction resist-trimming by these_morel on 2008-07-11 13:38:16 as
	Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 mu m device fabrication [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 1974-1981. by Chian Y. Sin, Bing H. Chen, W. L. Loh, et al.J. Yu, P. Yelehanka, A. See, L. Chan posted to introduction resist-trimming by these_morel on 2008-07-11 13:35:35 as
	Photoresist Trimming: Etch Solutions to CD Uniformity and Tuning [My Copy] Semiconductor International (September 2002) by Shyam Ramalingam, Chris Lee, Vahid Vahedi posted to introduction resist-trimming by these_morel on 2008-07-11 13:34:15 as
	Deep-submicrometer MOS device fabrication using a photoresist-ashing technique [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 9, No. 4. (1988), pp. 186-188. by J. Chung, M. Jeng, J. E. Moon, et al.A. T. Wu, T. Y. Chan, P. K. Ko, C. Hu posted to introduction resist-trimming by these_morel on 2008-07-11 13:24:20 as
	Microprofile simulations for plasma etching with surface passivation [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753. by S. Hamaguchi, M. Dalvie posted to introduction passivation plasma by these_morel on 2008-07-10 15:36:20 as
	Simulation of surface topography evolution during plasma etching by the method of characteristics [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635. by John C. Arnold, Herbert H. Sawin, Manoj Dalvie, Satoshi Hamaguchi posted to introduction passivation plasma by these_morel on 2008-07-10 15:35:13 as
	Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211. by G. S. Oehrlein, J. F. Rembetski, E. H. Payne posted to introduction passivation plasma by these_morel on 2008-07-10 15:33:25 as
	X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426. by L. Desvoivres, L. Vallier, O. Joubert posted to introduction passivation plasma by these_morel on 2008-07-10 15:32:30 as
	Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97. by F. H. Bell, O. Joubert posted to introduction passivation plasma by these_morel on 2008-07-10 15:31:39 as
	Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226. by K. V. Guinn, C. C. Cheng, V. M. Donnelly posted to introduction passivation plasma by these_morel on 2008-07-10 15:30:50 as
	Transistor MOS et sa technologie de fabrication [My Copy] Technique de l'ingénieur, No. E2430. (February 2000) by Thomas Skotnicki posted to cmos introduction microelectronics by these_morel on 2008-07-10 13:36:06 as
	Physics of Semiconductor Devices [My Copy] (04 November 1981) by Simon M. Sze posted to cmos introduction microelectronics by these_morel on 2008-07-10 13:28:17 as along with 1 person kristgy
	Dry etching for pattern transfer [My Copy] Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183. by H. W. Lehmann, R. Widmer posted to etching introduction plasma by these_morel on 2008-07-09 10:18:03 as
	Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60. by T. E. F. M. Standaert, C. Hedlund, E. A. Joseph, G. S. Oehrlein, T. J. Dalton posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:56:38 as
	Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129. by M. J. Sowa, M. E. Littau, V. Pohray, J. L. Cecchi posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:55:38 as
	The role of polymer deposited in differential dielectric etch [My Copy] The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095. by S. Fang, C. Chiang, D. Fraser, et al.B. Lee, P. Keswick, M. Chang, K. Fung posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:54:36 as
	Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor [My Copy] Physical Review, Vol. 122, No. 1. (1 April 1961), 83. by Homer D. Hagstrum posted to introduction plasma by these_morel on 2008-07-08 06:51:12 as
	Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets [My Copy] Physical Review, Vol. 184, No. 2. (1969), 383. by Peter Sigmund posted to introduction plasma by these_morel on 2008-07-08 06:47:24 as
	Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy [My Copy] Applied Physics Letters, Vol. 55 (1989), 1960. by Christoph Steinbrüchel posted to introduction plasma by these_morel on 2008-07-04 13:43:49 as
	Energy dependence of the ion-induced sputtering yields of monatomic solids [My Copy] Atomic Data and Nuclear Data Tables, Vol. 31, No. 1. (July 1984), pp. 1-80. by Noriaki Matsunami, Yasunori Yamamura, Yukikazu Itikawa, et al.Noriaki Itoh, Yukio Kazumata, Soji Miyagawa, Kenji Morita, Ryuichi Shimizu, Hiroyuki Tawara posted to introduction plasma by these_morel on 2008-07-04 13:35:27 as
	Control of relative etch rates of SiO2 and Si in plasma etching [My Copy] Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147. by Rudolf A. Heinecke posted to introduction plasma by these_morel on 2008-07-04 09:35:31 as
	Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas [My Copy] Pure and Applied Chemistry, Vol. 62, No. 9. (1990), pp. 1709-1720. by Daniel L. Flamm posted to introduction plasma by these_morel on 2008-07-04 09:13:26 as
	The reaction of fluorine atoms with silicon [My Copy] Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639. by Daniel L. Flamm, Vincent M. Donnelly, John A. Mucha posted to introduction plasma by these_morel on 2008-07-04 09:08:59 as
	Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching [My Copy] Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196. by J. W. Coburn, Harold F. Winters posted to introduction plasma by these_morel on 2008-07-03 15:57:45 as
	Plasma etching---A discussion of mechanisms [My Copy] Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403. by J. W. Coburn, Harold F. Winters posted to introduction plasma by these_morel on 2008-07-03 15:55:00 as
	A General Theory of the Plasma of an Arc [My Copy] Physical Review, Vol. 34, No. 6. (1929), 876. by Lewi Tonks, Irving Langmuir posted to introduction plasma by these_morel on 2008-07-03 15:06:45 as
	The work function of the elements and its periodicity [My Copy] Journal of Applied Physics, Vol. 48, No. 11. (1977), pp. 4729-4733. by Herbert B. Michaelson posted to gate introduction metal work-function by these_morel on 2008-05-20 13:59:25 as
	CMOS scaling into the nanometer regime [My Copy] Proceedings of the IEEE In Proceedings of the IEEE, Vol. 85, No. 4. (1997), pp. 486-504. by Yuan Taur, D. A. Buchanan, Wei Chen, et al.D. J. Frank, K. E. Ismail, Shih-Hsien Lo, G. A. Sai-Halasz, R. G. Viswanathan, H. J. C. Wann, S. J. Wind, Hon-Sum Wong posted to capacitive gate introduction metal by these_morel on 2008-05-20 10:04:37 as along with 1 person philip-eecs
	Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing [My Copy] IEEE Transactions on Electron Devices In Electron Devices, IEEE Transactions on, Vol. 44, No. 9. (1997), pp. 1467-1472. by T. Ushiki, Mo-Chiun Yu, Y. Hirano, H. Shimada, M. Morita, T. Ohmi posted to gate introduction metal metal-gate resistivity by these_morel on 2008-05-20 10:02:41 as
	Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 18, No. 12. (1997), pp. 580-582. by A. Gupta, Peng Fang, M. Song, et al.Ming-Ren Lin, D. Wollesen, K. Chen, C. Hu posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 12:55:02 as
	Polysilicon gate depletion effect on IC performance [My Copy] Solid-State Electronics, Vol. 38, No. 11. (November 1995), pp. 1975-1977. by Kai Chen, Mansun Chan, Ping K. Ko, Chenming Hu, Jian-Hui Huang posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 08:06:41 as
	Anomalous C-V characteristics of implanted polyMOS structure in n+/p+ dual-gate CMOS technology [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 10, No. 5. (1989), pp. 192-194. by C. Y. Lu, J. M. Sung, H. C. Kirsch, S. J. Hillenius, T. E. Smith, L. Manchanda posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 07:55:26 as
	Gate oxide scaling limits and projection [My Copy] Electron Devices Meeting, 1996., International In Electron Devices Meeting, 1996., International (1996), pp. 319-322. by Chenming Hu posted to eot introduction microelectronics polydepletion tunneling by these_morel on 2008-05-15 15:45:00 as
	Gate length dependent polysilicon depletion effects [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 23, No. 4. (2002), pp. 224-226. by Chang-Hoon Choi, P. R. Chidambaram, R. Khamankar, C. F. Machala, Zhiping Yu, R. W. Dutton posted to introduction microelectronics polydepletion by these_morel on 2008-05-15 15:35:15 as
	Device scaling limits of Si MOSFETs and their application dependencies [My Copy] Proceedings of the IEEE In Proceedings of the IEEE, Vol. 89, No. 3. (2001), pp. 259-288. by D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, Hon-Sum P. Wong posted to introduction microelectronics tunneling by these_morel on 2008-05-15 13:27:43 as along with 1 person enricaki
	Insulated gate field effect transistor integrated circuits with silicon gates [My Copy] IEEE Transactions on Electron Devices In Electron Devices, IEEE Transactions on, Vol. 16, No. 2. (1969), pp. 236-236. by F. Faggin, T. Klein, L. Vadasz posted to introduction microelectronics by these_morel on 2008-04-28 13:29:56 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

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