Register | Log in | FAQ      [?] 
Recent | Unread | Search | Authors | Tags | Export

these_morel's introduction [41 articles]

Recent papers added to these_morel's library classified by the tag introduction. You can also see everyone's introduction.
  • Plasma etching: principles, mechanisms, application to micro- and nano-technologies
    Applied Surface Science, Vol. 164, No. 1-4. (1 September 2000), pp. 72-83.
    by Christophe Cardinaud, Marie-Claude Peignon, Pierre-Yves Tessier
    posted to volatility metal introduction by these_morel on 2008-07-18 12:38:24 as **
  • VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
    (14 March 1994)
    by Sorab K Ghandhi
    posted to volatility introduction by these_morel on 2008-07-18 10:44:54 as **
  • Enhancement of the recombination rate of Br atoms by CF[sub 4] addition and resist etching in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Applied Physics, Vol. 94, No. 10. (2003), pp. 6285-6290.
    by G Cunge, O Joubert, N Sadeghi
    posted to introduction cleaning by these_morel on 2008-07-11 15:12:45 as **
  • Effect of chamber wall conditions on Cl and Cl[sub 2] concentrations in an inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 1. (2002), pp. 43-52.
    by Saurabh J Ullal, Anna R Godfrey, Erik Edelberg, Linda Braly, Vahid Vahedi, Eray S Aydil
    posted to introduction cleaning by these_morel on 2008-07-11 15:11:51 as **
  • Characteristics and mechanism of etch process sensitivity to chamber surface condition
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 1. (2001), pp. 166-171.
    by Songlin Xu, Zhiwen Sun, Xueyu Qian, John Holland, Dragan Podlesnik
    posted to introduction cleaning by these_morel on 2008-07-11 15:10:19 as **
  • Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas
    Microelectronic Engineering, Vol. 69, No. 2-4. (September 2003), pp. 350-357.
    by O Joubert, E Pargon, J Foucher, X Detter, G Cunge, L Vallier
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:38:16 as **
  • Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 mu m device fabrication
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 1974-1981.
    by Chian Y Sin, Bing H Chen, WL Loh, J Yu, P Yelehanka, A See, L Chan
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:35:35 as **
  • Photoresist Trimming: Etch Solutions to CD Uniformity and Tuning
    Semiconductor International (September 2002)
    by Shyam Ramalingam, Chris Lee, Vahid Vahedi
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:34:15 as **
  • Deep-submicrometer MOS device fabrication using a photoresist-ashing technique
    Electron Device Letters, IEEE, Vol. 9, No. 4. (1988), pp. 186-188.
    by J Chung, M Jeng, JE Moon, AT Wu, TY Chan, PK Ko, C Hu
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:24:20 as **
  • Microprofile simulations for plasma etching with surface passivation
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753.
    by S Hamaguchi, M Dalvie
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:36:20 as **
  • Simulation of surface topography evolution during plasma etching by the method of characteristics
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635.
    by John C Arnold, Herbert H Sawin, Manoj Dalvie, Satoshi Hamaguchi
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:35:13 as **
  • Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211.
    by GS Oehrlein, JF Rembetski, EH Payne
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:33:25 as **
  • X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426.
    by L Desvoivres, L Vallier, O Joubert
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:32:30 as **
  • Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97.
    by FH Bell, O Joubert
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:31:39 as **
  • Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226.
    by KV Guinn, CC Cheng, VM Donnelly
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:30:50 as **
  • Transistor MOS et sa technologie de fabrication
    Technique de l'ingénieur, No. E2430. (February 2000)
    by Thomas Skotnicki
    posted to microelectronics introduction cmos by these_morel on 2008-07-10 13:36:06 as **
  • Physics of Semiconductor Devices
    (04 November 1981)
    by Simon M Sze
    posted to microelectronics introduction cmos by these_morel on 2008-07-10 13:28:17 as ** along with 1 person kristgy
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to plasma introduction etching by these_morel on 2008-07-09 10:18:03 as **
  • Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60.
    by TEFM Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:56:38 as **
  • Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129.
    by MJ Sowa, ME Littau, V Pohray, JL Cecchi
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:55:38 as **
  • The role of polymer deposited in differential dielectric etch
    The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095.
    by S Fang, C Chiang, D Fraser, B Lee, P Keswick, M Chang, K Fung
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:54:36 as **
  • Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor
    Physical Review, Vol. 122, No. 1. (1 April 1961), 83.
    by Homer D Hagstrum
    posted to plasma introduction by these_morel on 2008-07-08 06:51:12 as **
  • Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
    Physical Review, Vol. 184, No. 2. (1969), 383.
    by Peter Sigmund
    posted to plasma introduction by these_morel on 2008-07-08 06:47:24 as **
  • Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy
    Applied Physics Letters, Vol. 55 (1989), 1960.
    by Christoph Steinbrüchel
    posted to plasma introduction by these_morel on 2008-07-04 13:43:49 as **
  • Energy dependence of the ion-induced sputtering yields of monatomic solids
    Atomic Data and Nuclear Data Tables, Vol. 31, No. 1. (July 1984), pp. 1-80.
    by Noriaki Matsunami, Yasunori Yamamura, Yukikazu Itikawa, Noriaki Itoh, Yukio Kazumata, Soji Miyagawa, Kenji Morita, Ryuichi Shimizu, Hiroyuki Tawara
    posted to plasma introduction by these_morel on 2008-07-04 13:35:27 as **
  • Control of relative etch rates of SiO2 and Si in plasma etching
    Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147.
    by Rudolf A Heinecke
    posted to plasma introduction by these_morel on 2008-07-04 09:35:31 as **
  • Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas
    Pure and Applied Chemistry, Vol. 62, No. 9. (1990), pp. 1709-1720.
    by Daniel L Flamm
    posted to plasma introduction by these_morel on 2008-07-04 09:13:26 as **
  • The reaction of fluorine atoms with silicon
    Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639.
    by Daniel L Flamm, Vincent M Donnelly, John A Mucha
    posted to plasma introduction by these_morel on 2008-07-04 09:08:59 as **
  • Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching
    Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196.
    by JW Coburn, Harold F Winters
    posted to plasma introduction by these_morel on 2008-07-03 15:57:45 as **
  • Plasma etching---A discussion of mechanisms
    Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403.
    by JW Coburn, Harold F Winters
    posted to plasma introduction by these_morel on 2008-07-03 15:55:00 as **
  • A General Theory of the Plasma of an Arc
    Physical Review, Vol. 34, No. 6. (1929), 876.
    by Lewi Tonks, Irving Langmuir
    posted to plasma introduction by these_morel on 2008-07-03 15:06:45 as *
  • The work function of the elements and its periodicity
    Journal of Applied Physics, Vol. 48, No. 11. (1977), pp. 4729-4733.
    by Herbert B Michaelson
    posted to work-function metal introduction gate by these_morel on 2008-05-20 13:59:25 as **
  • CMOS scaling into the nanometer regime
    Proceedings of the IEEE, Vol. 85, No. 4. (1997), pp. 486-504.
    by Yuan Taur, DA Buchanan, Wei Chen, DJ Frank, KE Ismail, Shih-Hsien Lo, GA Sai-Halasz, RG Viswanathan, HJC Wann, SJ Wind, Hon-Sum Wong
    posted to metal introduction gate capacitive by these_morel on 2008-05-20 10:04:37 as **
  • Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
    Electron Devices, IEEE Transactions on, Vol. 44, No. 9. (1997), pp. 1467-1472.
    by T Ushiki, Mo-Chiun Yu, Y Hirano, H Shimada, M Morita, T Ohmi
    posted to resistivity metal-gate metal introduction gate by these_morel on 2008-05-20 10:02:41 as **
  • Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
    Electron Device Letters, IEEE, Vol. 18, No. 12. (1997), pp. 580-582.
    by A Gupta, Peng Fang, M Song, Ming-Ren Lin, D Wollesen, K Chen, C Hu
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-16 12:55:02 as **
  • Polysilicon gate depletion effect on IC performance
    Solid-State Electronics, Vol. 38, No. 11. (November 1995), pp. 1975-1977.
    by Kai Chen, Mansun Chan, Ping K Ko, Chenming Hu, Jian-Hui Huang
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-16 08:06:41 as **
  • Anomalous C-V characteristics of implanted polyMOS structure in n+/p+ dual-gate CMOS technology
    Electron Device Letters, IEEE, Vol. 10, No. 5. (1989), pp. 192-194.
    by CY Lu, JM Sung, HC Kirsch, SJ Hillenius, TE Smith, L Manchanda
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-16 07:55:26 as **
  • Gate oxide scaling limits and projection
    Electron Devices Meeting, 1996., International (1996), pp. 319-322.
    by Chenming Hu
    posted to tunneling polydepletion microelectronics introduction eot by these_morel on 2008-05-15 15:45:00 as **
  • Gate length dependent polysilicon depletion effects
    Electron Device Letters, IEEE, Vol. 23, No. 4. (2002), pp. 224-226.
    by Chang-Hoon Choi, PR Chidambaram, R Khamankar, CF Machala, Zhiping Yu, RW Dutton
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-15 15:35:15 as **
  • Device scaling limits of Si MOSFETs and their application dependencies
    Proceedings of the IEEE, Vol. 89, No. 3. (2001), pp. 259-288.
    by DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, Hon-Sum P Wong
    posted to tunneling microelectronics introduction by these_morel on 2008-05-15 13:27:43 as **
  • Insulated gate field effect transistor integrated circuits with silicon gates
    Electron Devices, IEEE Transactions on, Vol. 16, No. 2. (1969), pp. 236-236.
    by F Faggin, T Klein, L Vadasz
    posted to microelectronics introduction by these_morel on 2008-04-28 13:29:56 as read
    • Note: You may cite this page as: http://www.citeulike.org/user/these_morel/tag/introduction

    RIS BibTeX RSS
    CiteULike organises scholarly (or academic) papers or literature and provides bibliographic (which means it makes bibliographies) for universities and higher education establishments. It helps undergraduates and postgraduates. People studying for PhDs or in postdoctoral (postdoc) positions. The service is similar in scope to EndNote or RefWorks or any other reference manager like BibTeX, but it is a social bookmarking service for scientists and humanities researchers.