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these_morel's metal [9 articles]

Recent papers added to these_morel's library classified by the tag metal. You can also see everyone's metal.
  • Plasma etching: principles, mechanisms, application to micro- and nano-technologies
    Applied Surface Science, Vol. 164, No. 1-4. (1 September 2000), pp. 72-83.
    by Christophe Cardinaud, Marie-Claude Peignon, Pierre-Yves Tessier
    posted to volatility metal introduction by these_morel on 2008-07-18 12:38:24 as **
  • The work function of the elements and its periodicity
    Journal of Applied Physics, Vol. 48, No. 11. (1977), pp. 4729-4733.
    by Herbert B Michaelson
    posted to work-function metal introduction gate by these_morel on 2008-05-20 13:59:25 as **
  • CMOS scaling into the nanometer regime
    Proceedings of the IEEE, Vol. 85, No. 4. (1997), pp. 486-504.
    by Yuan Taur, DA Buchanan, Wei Chen, DJ Frank, KE Ismail, Shih-Hsien Lo, GA Sai-Halasz, RG Viswanathan, HJC Wann, SJ Wind, Hon-Sum Wong
    posted to metal introduction gate capacitive by these_morel on 2008-05-20 10:04:37 as **
  • Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
    Electron Devices, IEEE Transactions on, Vol. 44, No. 9. (1997), pp. 1467-1472.
    by T Ushiki, Mo-Chiun Yu, Y Hirano, H Shimada, M Morita, T Ohmi
    posted to resistivity metal-gate metal introduction gate by these_morel on 2008-05-20 10:02:41 as **
  • notes WSix/WN/polysilicon DRAM gate stack with a 50 A WN layer as a diffusion barrier and an etch stop
    Materials Science in Semiconductor Processing, Vol. 8, No. 5. (October 2005), pp. 602-607.
    by Heon Lee, Dong-Hwan Kim, Joo-Youl Huh, Deok-Kee Kim
  • notes Integration of Dual Metal Gate CMOS on High-k Dielectrics Utilizing a Metal Wet Etch Process
    Electrochemical and Solid-State Letters, Vol. 8, No. 10. (2005), pp. G271-G274.
    by Zhibo Zhang, SC Song, Craig Huffman, Muhammad M Hussain, Joel Barnett, Naim Moumen, Husam N Alshareef, Prashant Majhi, Johnny H Sim, Sang H Bae, Byoung H Lee
  • notes Plasma etching of high-k and metal gate materials
    Vacuum, Vol. In Press, Corrected Proof
    by Keisuke Nakamura, Tomohiro Kitagawa, Kazushi Osari, Kazuo Takahashi, Kouichi Ono
    posted to ecr hfo2 high-k metal by these_morel on 2006-02-17 15:39:06 as read along with 1 group LTM_LETI_etching
  • Effects of Nitrogen Additive Gas on Sidewall Passivation in W/TiN/High-k Dielectric Gate Etching
    Microprocesses and Nanotechnology Conference, 2000 International (2000), pp. 210-211.
    by Jae-Young Kim, Yu-Kwon Kim, Kwang-Ok Kim, Chang J Choi, Jin W Kim
  • Metal gate technology for nanoscale transistors--material selection and process integration issues
    Thin Solid Films, Vol. 462-463 (September 2004), pp. 34-41.
    by Yee-Chia Yeo
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