these_morel's microelectronics [11 articles] Export

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	Transistor MOS et sa technologie de fabrication [My Copy] Technique de l'ingénieur, No. E2430. (February 2000) by Thomas Skotnicki posted to cmos introduction microelectronics by these_morel on 2008-07-10 13:36:06 as
	Physics of Semiconductor Devices [My Copy] (04 November 1981) by Simon M. Sze posted to cmos introduction microelectronics by these_morel on 2008-07-10 13:28:17 as along with 1 person kristgy
	Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 18, No. 12. (1997), pp. 580-582. by A. Gupta, Peng Fang, M. Song, et al.Ming-Ren Lin, D. Wollesen, K. Chen, C. Hu posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 12:55:02 as
	Polysilicon gate depletion effect on IC performance [My Copy] Solid-State Electronics, Vol. 38, No. 11. (November 1995), pp. 1975-1977. by Kai Chen, Mansun Chan, Ping K. Ko, Chenming Hu, Jian-Hui Huang posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 08:06:41 as
	Anomalous C-V characteristics of implanted polyMOS structure in n+/p+ dual-gate CMOS technology [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 10, No. 5. (1989), pp. 192-194. by C. Y. Lu, J. M. Sung, H. C. Kirsch, S. J. Hillenius, T. E. Smith, L. Manchanda posted to introduction microelectronics polydepletion by these_morel on 2008-05-16 07:55:26 as
	Gate oxide scaling limits and projection [My Copy] Electron Devices Meeting, 1996., International In Electron Devices Meeting, 1996., International (1996), pp. 319-322. by Chenming Hu posted to eot introduction microelectronics polydepletion tunneling by these_morel on 2008-05-15 15:45:00 as
	Gate length dependent polysilicon depletion effects [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 23, No. 4. (2002), pp. 224-226. by Chang-Hoon Choi, P. R. Chidambaram, R. Khamankar, C. F. Machala, Zhiping Yu, R. W. Dutton posted to introduction microelectronics polydepletion by these_morel on 2008-05-15 15:35:15 as
	Device scaling limits of Si MOSFETs and their application dependencies [My Copy] Proceedings of the IEEE In Proceedings of the IEEE, Vol. 89, No. 3. (2001), pp. 259-288. by D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, Hon-Sum P. Wong posted to introduction microelectronics tunneling by these_morel on 2008-05-15 13:27:43 as along with 1 person enricaki
	3D Integration of CMOS transistors with ICV-SLID technology [My Copy] Microelectronic Engineering In Proceedings of the ninth european workshop on materials for advanced metallization 2005, Vol. 82, No. 3-4. (December 2005), pp. 529-533. by Robert Wieland, Detlef Bonfert, Armin Klumpp, et al.Reinhard Merkel, Lars Nebrich, Josef Weber, Peter Ramm posted to 3d-integration cmos microelectronics by these_morel on 2008-05-14 11:38:36 as
	Cramming More Components Onto Integrated Circuits [My Copy] Electronics, Vol. 38, No. 8. (19 April 1965), pp. 82-85. by G. E. Moore posted to microelectronics moores-law by these_morel on 2008-05-14 09:48:11 as along with 6 people Jingbo Fantozzi flashfonic sjanusz yleblevec iPork
	Insulated gate field effect transistor integrated circuits with silicon gates [My Copy] IEEE Transactions on Electron Devices In Electron Devices, IEEE Transactions on, Vol. 16, No. 2. (1969), pp. 236-236. by F. Faggin, T. Klein, L. Vadasz posted to introduction microelectronics by these_morel on 2008-04-28 13:29:56 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's microelectronics [11 articles] Export

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