these_morel's plasma [54 articles] Export

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	Développement de procédés de gravure de grille métallique W, WN pour les nœuds technologiques sub-45 nm [My Copy] (May 2009) by Thomas Morel posted to 45nm gravure microelectronique morel plasma thomas tungstene xps by these_morel on 2009-07-01 07:47:39 as
	Principles of Plasma Discharges and Materials Processing , 2nd Edition [My Copy] (14 April 2005) by Michael A. Lieberman, Alan J. Lichtenberg posted to annexes plasma by these_morel on 2008-12-21 13:10:18 as
	Simulation of an Ar/Cl2 inductively coupled plasma : study of the effect of bias, power and pressure and comparison with experiments [My Copy] Journal of physics. D, Applied Physics, Vol. 41 (2008), 065207-1. by S. Tinck, W. Boullart, A. Bogaerts posted to annexes plasma by these_morel on 2008-12-21 13:06:27 as
	Monitoring sheath voltages and ion energies in high-density plasmas using noninvasive radio-frequency current and voltage measurements [My Copy] Journal of Applied Physics, Vol. 95, No. 9. (2004), pp. 4593-4604. by Mark A. Sobolewski posted to annexes plasma by these_morel on 2008-12-21 12:59:00 as
	Seasoning of plasma etching reactors: Ion energy distributions to walls and real-time and run-to-run control strategies [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, No. 3. (2008), pp. 498-512. by Ankur Agarwal, Mark J. Kushner posted to annexes plasma by these_morel on 2008-12-21 12:56:45 as
	Silicon doping effects in reactive plasma etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 468-475. by Young H. Lee, Mao M. Chen posted to doping etching plasma silicon by these_morel on 2008-09-16 15:30:03 as
	A simple analysis of an inductive RF discharge [My Copy] Plasma Sources Science and Technology, Vol. 1, No. 3. (1992), pp. 179-186. by R. B. Piejak, V. A. Godyak, B. M. Alexandrovich posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:31:10 as
	Application of a low-pressure radio frequency discharge source to polysilicon gate etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 1. (1990), pp. 1-4. by J. M. Cook, D. E. Ibbotson, D. L. Flamm posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:30:18 as
	Review of inductively coupled plasmas for plasma processing [My Copy] Plasma Sources Science and Technology, Vol. 1, No. 2. (1992), pp. 109-116. by J. Hopwood posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:29:26 as
	Determination of electromagnetic properties of low-pressure electrodeless inductive discharges [My Copy] Journal of Physics D: Applied Physics, Vol. 23, No. 3. (1990), pp. 293-298. by J. W. Denneman posted to dispositifs-experimentaux icp plasma reactor by these_morel on 2008-08-18 12:28:16 as
	Etude des interactions plasma–surface pendant la gravure du silicium dans des plasmas HBr/Cl2/O2 [My Copy] (2004) by Martin Kogelschatz posted to dispositifs-experimentaux introduction plasma by these_morel on 2008-08-11 10:27:20 as
	Microprofile simulations for plasma etching with surface passivation [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753. by S. Hamaguchi, M. Dalvie posted to introduction passivation plasma by these_morel on 2008-07-10 15:36:20 as
	Simulation of surface topography evolution during plasma etching by the method of characteristics [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635. by John C. Arnold, Herbert H. Sawin, Manoj Dalvie, Satoshi Hamaguchi posted to introduction passivation plasma by these_morel on 2008-07-10 15:35:13 as
	Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211. by G. S. Oehrlein, J. F. Rembetski, E. H. Payne posted to introduction passivation plasma by these_morel on 2008-07-10 15:33:25 as
	X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426. by L. Desvoivres, L. Vallier, O. Joubert posted to introduction passivation plasma by these_morel on 2008-07-10 15:32:30 as
	Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97. by F. H. Bell, O. Joubert posted to introduction passivation plasma by these_morel on 2008-07-10 15:31:39 as
	Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226. by K. V. Guinn, C. C. Cheng, V. M. Donnelly posted to introduction passivation plasma by these_morel on 2008-07-10 15:30:50 as
	Dry etching for pattern transfer [My Copy] Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183. by H. W. Lehmann, R. Widmer posted to etching introduction plasma by these_morel on 2008-07-09 10:18:03 as
	Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60. by T. E. F. M. Standaert, C. Hedlund, E. A. Joseph, G. S. Oehrlein, T. J. Dalton posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:56:38 as
	Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129. by M. J. Sowa, M. E. Littau, V. Pohray, J. L. Cecchi posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:55:38 as
	The role of polymer deposited in differential dielectric etch [My Copy] The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095. by S. Fang, C. Chiang, D. Fraser, et al.B. Lee, P. Keswick, M. Chang, K. Fung posted to fluorocarbon introduction plasma by these_morel on 2008-07-08 06:54:36 as
	Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor [My Copy] Physical Review, Vol. 122, No. 1. (1 April 1961), 83. by Homer D. Hagstrum posted to introduction plasma by these_morel on 2008-07-08 06:51:12 as
	Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets [My Copy] Physical Review, Vol. 184, No. 2. (1969), 383. by Peter Sigmund posted to introduction plasma by these_morel on 2008-07-08 06:47:24 as
	Universal energy dependence of physical and ion-enhanced chemical etch yields at low ion energy [My Copy] Applied Physics Letters, Vol. 55 (1989), 1960. by Christoph Steinbrüchel posted to introduction plasma by these_morel on 2008-07-04 13:43:49 as
	Energy dependence of the ion-induced sputtering yields of monatomic solids [My Copy] Atomic Data and Nuclear Data Tables, Vol. 31, No. 1. (July 1984), pp. 1-80. by Noriaki Matsunami, Yasunori Yamamura, Yukikazu Itikawa, et al.Noriaki Itoh, Yukio Kazumata, Soji Miyagawa, Kenji Morita, Ryuichi Shimizu, Hiroyuki Tawara posted to introduction plasma by these_morel on 2008-07-04 13:35:27 as
	Control of relative etch rates of SiO2 and Si in plasma etching [My Copy] Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147. by Rudolf A. Heinecke posted to introduction plasma by these_morel on 2008-07-04 09:35:31 as
	Mechanisms of silicon etching in fluorine- and chlorine-containing plasmas [My Copy] Pure and Applied Chemistry, Vol. 62, No. 9. (1990), pp. 1709-1720. by Daniel L. Flamm posted to introduction plasma by these_morel on 2008-07-04 09:13:26 as
	The reaction of fluorine atoms with silicon [My Copy] Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639. by Daniel L. Flamm, Vincent M. Donnelly, John A. Mucha posted to introduction plasma by these_morel on 2008-07-04 09:08:59 as
	Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching [My Copy] Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196. by J. W. Coburn, Harold F. Winters posted to introduction plasma by these_morel on 2008-07-03 15:57:45 as
	Plasma etching---A discussion of mechanisms [My Copy] Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403. by J. W. Coburn, Harold F. Winters posted to introduction plasma by these_morel on 2008-07-03 15:55:00 as
	A General Theory of the Plasma of an Arc [My Copy] Physical Review, Vol. 34, No. 6. (1929), 876. by Lewi Tonks, Irving Langmuir posted to introduction plasma by these_morel on 2008-07-03 15:06:45 as
	Plasma Etching of Refractory Gates for VLSI Applications [My Copy] Journal of the Electrochemical Society, Vol. 131, No. 10. (1984), 2325. by T. P. Chow, A. J. Steckl posted to etching plasma tungsten by these_morel on 2008-04-23 09:10:58 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: I. Without silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 icp plasma xps by these_morel on 2008-03-05 09:16:38 as
	Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas [My Copy] Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530. by G. Cunge, M. Kogelschatz, N. Sadeghi posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as
	Plasma–wall interactions during silicon etching processes in high-density HBr/Cl2/O2 plasmas [My Copy] Plasma Sources Science and Technology, Vol. 14, No. 2. (2005), pp. S42-S52. by G. Cunge, M. Kogelschatz, O. Joubert, N. Sadeghi posted to absorption cl2-o2 parois plasma by these_morel on 2008-03-05 09:11:32 as
	The Kinetics of Tungsten Etching by Atomic and Molecular Chlorine [My Copy] Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2090-2095. by M. Balooch, D. S. Fischl, D. R. Olander posted to cl2 etching plasma tungsten by these_morel on 2008-03-05 08:44:22 as
	Etching of Tungsten and Tungsten Silicide Films by Chlorine Atoms [My Copy] Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2016-2019. by D. A. Fischl, G. W. Rodrigues, D. W. Hess posted to cl2 plasma tungsten wsi by these_morel on 2008-03-05 08:39:23 as
	Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 3. (2004), pp. 553-563. by O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz, E. Pargon posted to floating_sample plasma xps by these_morel on 2007-10-08 14:47:12 as
	Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697. by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara posted to etching fluorocarbon hfo2 plasma xps by these_morel on 2006-12-13 15:40:29 as
	Development of Damage Free HfAlO Removal Process Using Plasma Treatment. [My Copy] In 2004 Dry Process International Symposium (2004) by J. W. Sun, C. H. Shin, G. J. Min, C. J. Kang, H. K. Cho, J. T. Moon posted to ar cf4 hfalo high-k plasma rie by these_morel on 2006-03-21 07:40:08 as
	Plasma induced 193-nm Resist Deformation: Problems and a Possible Solution. [My Copy] In 2004 Dry Process International Symposium (2004) by H. Stryuf, Q. T. Le, T. Dupont, W. Boullart, S. Vanhaelemeersch posted to deformation-resist hbr icp plasma by these_morel on 2006-03-21 07:38:15 as
	Analyse des mécanismes mis en jeu lors de l’élaboration par gravure plasma de structures de dimension nanométrique : Application au transistor CMOS ultime. [My Copy] (3 December 2004) by Erwin Pargon posted to etching plasma by these_morel on 2006-03-21 07:17:37 as
	Etching of ruthenium coatings in O[sub 2]- and Cl[sub 2]-containing plasmas [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 1-8. by C. C. Hsu, J. W. Coburn, D. B. Graves posted to cl2-o2 plasma ruthenium by these_morel on 2006-02-28 15:18:11 as
	Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042. by Masaaki Sato, Yoshinobu Arita posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as
	Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 5. (1991), pp. 2530-2535. by N. Selamoglu, C. N. Bredbenner, T. A. Giniecki, H. J. Stocker posted to aluminium angle chf3-cl2-bcl3 plasma rie taper by these_morel on 2006-02-28 15:00:10 as
	Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191. by S. C. Mcnevin posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as
	The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, No. 2. (1989), pp. 167-174. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to cf3-cl cf4-o2 plasma rie tungsten by these_morel on 2006-02-28 14:52:40 as
	Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041. by Gottlieb S. Oehrlein, Lennart J. Lindstom posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as
	Ion-bombardment-enhanced plasma etching of tungsten with NF[sub 3]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 5. (1988), pp. 1570-1572. by W. M. Greene, D. W. Hess, W. G. Oldham posted to etching nf3-o2 plasma tungsten by these_morel on 2006-02-28 14:45:35 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

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