these_morel's poly-si [13 articles] Export

Recent papers added to these_morel's library classified by the tag poly-si. You can also see everyone's poly-si.

	Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2174-2183. by X. Detter, R. Palla, Thomas I. Boutherin, et al.E. Pargon, G. Cunge, O. Joubert, L. Vallier posted to etching hbr overetch poly-si by these_morel on 2008-11-05 09:48:40 as
	On the origin of the notching effect during etching in uniform high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 70-87. by Gyeong S. Hwang, Konstantinos P. Giapis posted to notching poly-si by these_morel on 2008-09-18 13:29:55 as
	Influence of the polysilicon doping on the electrical quality of thin oxides: a confrontation between vertical and horizontal furnaces [My Copy] Materials Science in Semiconductor Processing, Vol. 4, No. 1-3. (6 February 2001), pp. 153-157. by G. Franco, M. Priulla, G. Renna, G. Scerra posted to doping poly-si resistivity by these_morel on 2008-09-17 13:17:39 as
	Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices [My Copy] Japanese Journal of Applied Physics, Vol. 46 (2007), pp. 2134-2138. by Min G. Sung, Kwan-Yong Lim, Heung-Jae Cho, et al.Seung R. Lee, Se-Aug Jang, Yong S. Kim, Moon S. Joo, Ju-Hee Lee, Tae-Yoon Kim, Hong-Seon Yang, Seung-Ho Pyi, Jin W. Kim posted to poly-si silicidation tin tungsten by these_morel on 2008-08-13 07:39:11 as
	Poly-Si/TiN/HfO[sub 2] gate stack etching in high-density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3. (2007), pp. 767-778. by A. Le Gouil, O. Joubert, G. Cunge, et al.T. Chevolleau, L. Vallier, B. Chenevier, I. Matko posted to effet-de-charge etching poly-si tin xps by these_morel on 2008-03-05 09:03:24 as
	Patterning of W/WNx/poly-Si gate electrode using Cl2/O2 plasmas [My Copy] Microelectronic Engineering, Vol. 65, No. 3. (March 2003), pp. 285-292. by Hyoun-Woo Kim, Byong-Sun Ju, Chang-Jin Kang, Joo-Tae Moon posted to cl2-o2 poly-si temperature tungsten-nitride by these_morel on 2006-03-21 14:36:30 as along with 2 people ashrafrkhan Stanley_vrc
	Reduction Technique of Line-Edge Roughness Independent of CD Shift in Gate-Etching Process [My Copy] In 2004 Dry Process International Symposium by Masaru Kurihara, Masaru Izawa posted to gate line-edge-roughness poly-si uhf-ecr by these_morel on 2006-03-21 07:34:20 as
	Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching [My Copy] The 46th international symposium of the american vacuum society, Vol. 18, No. 4. (2000), pp. 1173-1175. by Shih P. Lin, Chen H. Ou, Szetsen Lee, Yu C. Tien, Chin F. Hsu posted to hbr-cl2-o2 poly-si rie time-delay-effect wsix by these_morel on 2006-02-28 15:09:27 as
	Role of oxygen in ion-enhanced etching of poly-Si and WSi[sub x] with chlorine [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2215-2221. by Gowri P. Kota, J. W. Coburn, David B. Graves posted to cl2 etching molecular-beam-system poly-si wsi by these_morel on 2006-02-28 15:06:32 as
	Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042. by Masaaki Sato, Yoshinobu Arita posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as
	Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191. by S. C. Mcnevin posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as
	WSix/WN/polysilicon DRAM gate stack with a 50 A WN layer as a diffusion barrier and an etch stop [My Copy] Materials Science in Semiconductor Processing, Vol. 8, No. 5. (October 2005), pp. 602-607. by Heon Lee, Dong-Hwan Kim, Joo-Youl Huh, Deok-Kee Kim posted to cl2-nf3-o2 gate metal poly-si tcp tungsten-nitride wsi by these_morel on 2006-02-17 15:45:45 as
	Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas [My Copy] Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79. by Mutumi Tuda, Kenji Shintani, Junji Tanimura posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's poly-si [13 articles] Export

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