these_morel's rie [16 articles] Export

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	Reactive Ion Etching of Tungsten with Chlorinated Fluorocarbons [My Copy] Journal of Electrochemical Society, Vol. 136, No. 10. (October 1989), pp. 2973-2979. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to actinometry cl2 etching fluorocarbon rie tungsten by these_morel on 2008-03-05 08:48:01 as
	A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel on 2006-06-19 09:36:54 as along with 1 person Stanley_vrc
	Tungsten etching mechanisms in CF[sub 4]/O[sub 2] reactive ion etching plasmas [My Copy] Journal of Applied Physics, Vol. 66, No. 10. (1989), pp. 5034-5038. by Tim D. Bestwick, Gottlieb S. Oehrlein posted to cf4-o2 rie tungsten xps by these_morel on 2006-05-12 09:49:54 as along with 1 person Stanley_vrc
	Formation of polymeric layers using halogen-carbon plasmas [My Copy] Vacuum, Vol. 68, No. 3. (20 November 2002), pp. 239-244. by Z. Rutkuniene, A. Grigonis posted to cf4 polymer_layer rie by these_morel on 2006-04-05 11:37:28 as
	Development of Damage Free HfAlO Removal Process Using Plasma Treatment. [My Copy] In 2004 Dry Process International Symposium (2004) by J. W. Sun, C. H. Shin, G. J. Min, C. J. Kang, H. K. Cho, J. T. Moon posted to ar cf4 hfalo high-k plasma rie by these_morel on 2006-03-21 07:40:08 as
	Molybdenum Etching Using CCl4/O2 Mixture Gas [My Copy] Japanese Journal of Applied Physics, Vol. 21, No. 1. (January 1982), pp. 168-172. by Yukinori Kurogi, Kazuo Kamimura posted to ccl4-o2 etching molybdenum rie by these_morel on 2006-03-17 15:18:32 as
	Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3. (1995), pp. 914-917. by Sung K. Kwon, Kyung N. Kim, Chul W. Nam, Seong I. Woo posted to cf4-o2 co co2 etching plasmas rie tungsten by these_morel on 2006-03-03 12:35:35 as
	Reactive ion etching of a 20 nanometers tungsten gate using a SF[sub 6]/N[sub 2] chemistry and hydrogen silsesquioxane hard mask resist [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5. (2005), pp. 2046-2050. by Guilhem Larrieu, Emmanuel Dubois posted to rie sf6-n2 tungsten by these_morel on 2006-02-28 15:15:26 as
	Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching [My Copy] The 46th international symposium of the american vacuum society, Vol. 18, No. 4. (2000), pp. 1173-1175. by Shih P. Lin, Chen H. Ou, Szetsen Lee, Yu C. Tien, Chin F. Hsu posted to hbr-cl2-o2 poly-si rie time-delay-effect wsix by these_morel on 2006-02-28 15:09:27 as
	Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042. by Masaaki Sato, Yoshinobu Arita posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as
	Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 5. (1991), pp. 2530-2535. by N. Selamoglu, C. N. Bredbenner, T. A. Giniecki, H. J. Stocker posted to aluminium angle chf3-cl2-bcl3 plasma rie taper by these_morel on 2006-02-28 15:00:10 as
	Reactive-ion etching of tungsten silicide using NF[sub 3] gas mixtures [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 6. (1991), pp. 2747-2751. by Ru L. Lee, Jr posted to chf3 nf3-h2 nf3-he plasmas rie wsix by these_morel on 2006-02-28 14:57:39 as
	The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, No. 2. (1989), pp. 167-174. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to cf3-cl cf4-o2 plasma rie tungsten by these_morel on 2006-02-28 14:52:40 as
	Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041. by Gottlieb S. Oehrlein, Lennart J. Lindstom posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as
	Selective reactive ion etching of tungsten films in CHF[sub 3] and other fluorinated gases [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 4. (1988), pp. 1073-1080. by W. S. Pan, A. J. Steckl posted to cbrf3 cf4 chf3 plasma rie sf6 tungsten by these_morel on 2006-02-28 14:43:21 as
	Study of Conditions for Anisotropic Plasma Etching of Tungsten and Tungsten Nitride Using SF[sub 6]/Ar Gas Mixtures [My Copy] Journal of The Electrochemical Society, Vol. 149, No. 3. (2002), pp. G179-G183. by Reyes C. Betanzo, S. A. Moshkalyov, A. C. Ramos, J. A. Diniz, J. W. Swart posted to rie sf6-ar tungsten-nitride by these_morel on 2006-02-17 14:10:08 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's rie [16 articles] Export

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