CiteULike: these_morel's sf6-ar [5 articles]

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	Highly Anisotropic Etching of Tungsten-Nitride for an X-Ray Mask Absorber with an Inductively Coupled Plasma System [My Copy] Japanese Journal of Applied Physics, Vol. 37 (1998), pp. 6819-6823. by Hong G. Lee, Seung Y. Lee, Ho S. Moon, Sang H. Kim, Joo-Hiuk S. Sohn, Jinho Ahn posted to etching icp sf6-ar sf6-n2 tungsten-nitride by these_morel on 2008-08-25 12:23:31 as
	Integrated Chemical Vapor Deposition and Plasma Etchback of Tungsten in a Multichamber, Single-Wafer System [My Copy] Journal of the Electrochemical Society, Vol. 138, No. 10. (1991), pp. 3008-3013. by Paul E. Riley, Thomas E. Clark posted to etchback sf6-ar tungsten by these_morel on 2008-08-21 08:12:17 as
	TiN Etching and Its Effects on Tungsten Etching in SF6/Ar Helicon Plasma [My Copy] Japanese Journal of Applied Physics, Vol. 37, No. 3A. (1998), pp. 801-806. by Chang J. Choi, Yeo S. Seol, Ki-Ho Baik posted to etching sf6-ar titane_nitride tungsten by these_morel on 2006-12-14 14:19:37 as
	The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers [My Copy] Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150. by H. C. Lee, S. Vanhaelemeersch posted to cl2 etching masking-materials sf6-ar tungsten by these_morel on 2006-06-19 09:39:31 as along with 1 person Stanley_vrc
	Study of Conditions for Anisotropic Plasma Etching of Tungsten and Tungsten Nitride Using SF[sub 6]/Ar Gas Mixtures [My Copy] Journal of The Electrochemical Society, Vol. 149, No. 3. (2002), pp. G179-G183. by Reyes C. Betanzo, S. A. Moshkalyov, A. C. Ramos, J. A. Diniz, J. W. Swart posted to rie sf6-ar tungsten-nitride by these_morel on 2006-02-17 14:10:08 as

plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
tungsten-nitride	15
icp	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
dielectric	9
silicon	9
metal	9
mass-spectrometry	9
cf4	9
fluorocarbon	8
parois	8
metal-gate	8
tin	7
passivation	7
molybdenum	7
absorption	7
cf4-o2	7
fluorine	7
polydepletion	6
sf6	6
reactor	6
plasmas	6
cmos	5
titane_nitride	5
notching	5
resist-trimming	5
tan	5
sf6-n2	5
wsi	5
hbr	5
sf6-ar	5
cleaning	5
sf6-o2	5
annexes	4
sio2	4
hbr-cl2-o2	4
bcl3	4
oxidation	4
nf3	4
ecr	4
wet-etching	4
effet-de-charge	3
volatility	3
ar	3
zro2	3
recess	3
chemical-vapor-deposition	3
decomposition	3
dual-metal-gate	3
dissociation	3
tungsten-oxide	3
work-function	3
tem	3
resistivity	3
temperature	3
tunneling	3
optical-emission-spectroscopy	3
nitrogen	3
nf3-o2	2
hfalo	2
ruthenium	2
titanium	2
deposition	2
doping	2
o2	2
wcl	2
wocl	2
wsix	2
xrr	2
materials	2
chf3	2
polymer_layer	2
c4f8	2
arxps	2
meb	2
microloading	2
hbr-o2	2
bcl3-o2	2
sicl4-cl2	2
cf4-cl2	2
incorporation	2
helicon-plasma	2
cl2-nf3-o2	2
n2	1
thomas	1
hf	1
cf3-cl	1
gravure	1
photoresist	1
nf3-he	1
morel	1
sputter-deposition	1
negative-ion	1
taper	1
c4f8-ar-h2	1
45nm	1
cbrf3	1
dry-etching	1
line-edge-roughness	1
midgap	1
eels	1
tungstene	1
nf3-h2	1
vlsi	1
wcl4	1
hfsio	1
hfn	1
hfsion	1
interconnections	1
oxygen	1
microelectronique	1
3d-integration	1
magnetoplasma	1
silicidation	1
zralo	1
overetch	1
co2	1
bowing	1
gate-patterning	1
pulverisation	1
wco6	1
etchback	1
neural-networks	1
mosi	1
chf3-cl2-bcl3	1
sf6-ar-cl2	1
dhf	1
time-delay-effect	1
angle	1
hfon	1
eot	1
floating_sample	1
co	1
tac	1
new-devices	1
microtrenching	1
aluminium	1
ccl4-o2	1
moores-law	1
wiggling	1
molecular-beam-system	1
damage	1
clo	1
masking-materials	1
nh3	1
eftem	1
selectivity	1
lpcvd	1
uhf-ecr	1
tcp_9400	1
sf6-chf3	1
deformation-resist	1
tcp	1
lam	1
capacitive	1
interferometry	1

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