these_morel's silicon [9 articles] Export

Recent papers added to these_morel's library classified by the tag silicon. You can also see everyone's silicon.

	Silicon doping effects in reactive plasma etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 468-475. by Young H. Lee, Mao M. Chen posted to doping etching plasma silicon by these_morel on 2008-09-16 15:30:03 as
	Is actinometry reliable for monitoring Si and silicone halides produced in silicon etching plasmas? A comparison with their absolute densities measured by UV broad band absorption [My Copy] The European Physical Journal Applied Physics, Vol. 33 (2006), pp. 205-212. by M. Kogelschatz, G. Cunge, N. Sadeghi posted to absorption actinometry etching silicon by these_morel on 2008-09-05 13:27:46 as
	Silicon etching mechanisms in a CF[sub 4]/H[sub 2] glow discharge [My Copy] Journal of Applied Physics, Vol. 62, No. 2. (1987), pp. 662-672. by Gottlieb S. Oehrlein, Holly L. Williams posted to cf4 etching fluorocarbon silicon by these_morel on 2008-09-04 13:20:25 as
	Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching [My Copy] Journal of Applied Physics, Vol. 102, No. 9. (2007) by G. Cunge, N. Sadeghi, R. Ramos posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as
	Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas [My Copy] Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530. by G. Cunge, M. Kogelschatz, N. Sadeghi posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as
	Sub-0.1 mu m gate etch processes: Towards some limitations of the plasma technology? [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 1. (2000), pp. 156-165. by L. Desvoivres, L. Vallier, O. Joubert posted to oxidation recess silicon xps by these_morel on 2008-03-05 08:58:33 as
	Thin gate oxide behavior during plasma patterning of silicon gates [My Copy] Applied Physics Letters, Vol. 75, No. 8. (1999), pp. 1069-1070. by L. Vallier, L. Desvoivres, M. Bonvalot, O. Joubert posted to etching oxidation recess silicon by these_morel on 2008-01-03 13:49:54 as
	Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2205-2211. by S. A. Vitale, B. A. Smith posted to etching oxidation recess silicon by these_morel on 2007-12-20 14:56:17 as
	Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148. by G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, N. Sadeghi posted to etching hbr-cl2-o2 mass-spectrometry silicon by these_morel on 2007-03-21 16:14:22 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

these_morel's silicon [9 articles] Export

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