these_morel's tungsten [45 articles] Export

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	Tungsten metal gate etching in Cl[sub 2]/O[sub 2] inductively coupled high density plasmas [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 6. (2008), pp. 1875-1882. by T. Morel, S. Bamola, R. Ramos, A. Beaurain, E. Pargon, O. Joubert posted to cl2-nf3-o2 cl2-o2 metal-gate tungsten xps by these_morel on 2009-06-02 15:05:04 as
	Thermochemistry of the gaseous tungsten fluorides [My Copy] The Journal of Chemical Physics, Vol. 62, No. 8. (1975), pp. 3074-3079. by D. L. Hildenbrand posted to fluorine sf6 tungsten by these_morel on 2009-01-05 12:20:32 as
	Isolation and characterization of reactive intermediates and active catalysts in homogeneous catalysis [My Copy] Journal of the American Chemical Society, Vol. 107, No. 8. (1 April 1985), pp. 2380-2388. by Paul G. Gassman, David W. Macomber, Stephen M. Willging posted to tungsten wcl4 xps by these_morel on 2008-12-09 09:35:35 as
	Interactions entre les plasmas de gravure à couplage inductif et les parois du réacteur [My Copy] (2008) by Raphael Ramos posted to parois tungsten tungsten-nitride wsi by these_morel on 2008-12-08 14:58:26 as
	Gravure ionique réactive des couches minces de tungstène en plasmas radiofréquence de SF6/O2 [My Copy] (1993) by Marie-Claude Peignon posted to etching mass-spectrometry sf6-o2 tungsten by these_morel on 2008-12-08 07:11:53 as
	Group 6 Oxychlorides MOCl4, where M = Mo, W, and element 106 (Sg): Electronic Structure and Thermochemical Stability [My Copy] The Journal of Physical Chemistry, Vol. 99, No. 1. (1 January 1995), pp. 144-147. by V. Pershina, B. Fricke posted to tungsten wcl wocl by these_morel on 2008-12-03 10:23:25 as
	Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas [My Copy] Thin Solid Films In Proceedings of the 30th International Conference on Metallurgical Coatings and Thin Films, Vol. 447-448 (30 January 2004), pp. 586-591. by S. D. Park, Y. J. Lee, N. G. Cho, et al.S. G. Kim, H. H. Choe, M. P. Hong, G. Y. Yeom posted to ar cf4-cl2 icp n2 o2 tungsten by these_morel on 2008-09-19 09:57:32 as
	Parallel angle resolved XPS investigations on 12 in. wafers for the study of W and WSix oxidation in air [My Copy] Microelectronic Engineering, Vol. 85, No. 9. (September 2008), pp. 1882-1887. by B. Pelissier, A. Beaurain, J. P. Barnes, R. Gassilloud, F. Martin, O. Joubert posted to arxps oxidation tungsten xps by these_morel on 2008-09-19 08:41:13 as
	Low Pressure Chemical Vapor Deposition of Tungsten on Polycrystalline and Single-Crystal Silicon via the Silicon Reduction [My Copy] Journal of Electrochemical Society, Vol. 131, No. 11. (November 1984), pp. 2702-2708. by K. Y. Tsao, H. H. Busta posted to interconnections lpcvd tungsten by these_morel on 2008-08-25 08:37:49 as
	Integrated Chemical Vapor Deposition and Plasma Etchback of Tungsten in a Multichamber, Single-Wafer System [My Copy] Journal of the Electrochemical Society, Vol. 138, No. 10. (1991), pp. 3008-3013. by Paul E. Riley, Thomas E. Clark posted to etchback sf6-ar tungsten by these_morel on 2008-08-21 08:12:17 as
	Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices [My Copy] Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 286-288. by A. Katz, S. J. Pearton, M. Geva posted to ecr etching tungsten by these_morel on 2008-08-20 12:58:34 as
	Highly anisotropic etching of submicrometer features on tungsten [My Copy] Journal of Applied Physics, Vol. 78, No. 11. (1995), pp. 6780-6783. by F. Bounasri, E. Gat, M. Chaker, M. Moisan, J. Margot, M. F. Ravet posted to etching magnetoplasma tungsten by these_morel on 2008-08-20 12:56:04 as
	Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices [My Copy] Japanese Journal of Applied Physics, Vol. 46 (2007), pp. 2134-2138. by Min G. Sung, Kwan-Yong Lim, Heung-Jae Cho, et al.Seung R. Lee, Se-Aug Jang, Yong S. Kim, Moon S. Joo, Ju-Hee Lee, Tae-Yoon Kim, Hong-Seon Yang, Seung-Ho Pyi, Jin W. Kim posted to poly-si silicidation tin tungsten by these_morel on 2008-08-13 07:39:11 as
	Etude d’électrodes métalliques à base de tungstène, préparées par MOCVD, pour empilement de grille CMOS de technologie sub-65 nmTECHNOLOGIE SUB–65 nm [My Copy] (2006) by Stéphane Allegret posted to deposition tungsten tungsten-nitride by these_morel on 2008-07-24 14:21:01 as
	The Deposition of Molybdenum and Tungsten Films from Vapor Decomposition of Carbonyls [My Copy] Journal of Electrochemical Society, Vol. 117, No. 5. (1970), pp. 693-700. by L. H. Kaplan, F. M. D'heurle posted to chemical-vapor-deposition dispositifs-experimentaux tungsten by these_morel on 2008-07-24 14:16:14 as
	Plasma Etching of Refractory Gates for VLSI Applications [My Copy] Journal of the Electrochemical Society, Vol. 131, No. 10. (1984), 2325. by T. P. Chow, A. J. Steckl posted to etching plasma tungsten by these_morel on 2008-04-23 09:10:58 as
	Spectroscopic and Electrochemical Studies of Tungsten(VI) and Tungsten(V) Chloride and Oxychloride Complexes in a Sodium Chloride Saturated Sodium Chloroaluminate Melt [My Copy] Journal of The Electrochemical Society, Vol. 140, No. 10. (1993), pp. 2733-2739. by Wen I. Sun, Anna G. Edwards, Gleb Mamantov posted to absorption tungsten wcl wocl by these_morel on 2008-04-07 09:43:14 as
	Reactive Ion Etching of Tungsten with Chlorinated Fluorocarbons [My Copy] Journal of Electrochemical Society, Vol. 136, No. 10. (October 1989), pp. 2973-2979. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to actinometry cl2 etching fluorocarbon rie tungsten by these_morel on 2008-03-05 08:48:01 as
	The Kinetics of Tungsten Etching by Atomic and Molecular Chlorine [My Copy] Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2090-2095. by M. Balooch, D. S. Fischl, D. R. Olander posted to cl2 etching plasma tungsten by these_morel on 2008-03-05 08:44:22 as
	Etching of Tungsten and Tungsten Silicide Films by Chlorine Atoms [My Copy] Journal of Electrochemical Society, Vol. 135, No. 8. (August 1988), pp. 2016-2019. by D. A. Fischl, G. W. Rodrigues, D. W. Hess posted to cl2 plasma tungsten wsi by these_morel on 2008-03-05 08:39:23 as
	Influence of Carbon-Chlorine Surface Complexes on the Properties of Tungsten Oxide Supported on Activated Carbons. 1. Dispersion, Distribution, and Chemical Nature of the Metal Oxide Phase [My Copy] J. Phys. Chem. B, Vol. 107, No. 21. (29 May 2003), pp. 4997-5002. by A. F. Perez-Cadenas, F. J. Maldonado-Hodar, J. L. G. Fierro, C. Moreno-Castilla posted to tungsten tungsten-oxide xps by these_morel on 2007-09-28 07:24:02 as
	Chemical downstream etching of tungsten [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2115-2119. by M. G. Blain, R. L. Jarecki, R. J. Simonson posted to tungsten tungsten-oxide xps by these_morel on 2007-09-28 07:20:17 as
	Etching of tungsten with XeF[sub 2]: An x-ray photoelectron spectroscopy study [My Copy] Journal of Applied Physics, Vol. 62, No. 11. (1987), pp. 4587-4590. by A. Bensaoula, E. Grossman, A. Ignatiev posted to fluorine tungsten xps by these_morel on 2007-08-03 10:53:57 as
	X-ray photoelectron spectroscopy characteristics of the W/TiN/Si and W/TiN/SiO2/Si structures [My Copy] Journal of Electron Spectroscopy and Related Phenomena, Vol. 63, No. 2. (2 August 1993), pp. 145-153. by Sunil Kumar, D. R. Chopra, Gregory C. Smith posted to titane_nitride tungsten xps by these_morel on 2007-04-04 12:55:19 as
	Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products [My Copy] Plasma Chemistry and Plasma Processing, Vol. 5, No. 4. (1 December 1985), pp. 333-351. by A. Picard, G. Turban posted to etching mass-spectrometry molybdenum sf6-o2 tungsten by these_morel on 2007-03-30 15:41:30 as
	TiN Etching and Its Effects on Tungsten Etching in SF6/Ar Helicon Plasma [My Copy] Japanese Journal of Applied Physics, Vol. 37, No. 3A. (1998), pp. 801-806. by Chang J. Choi, Yeo S. Seol, Ki-Ho Baik posted to etching sf6-ar titane_nitride tungsten by these_morel on 2006-12-14 14:19:37 as
	Optical Emission Spectrometry of Plasma in Low-Damage Sub-100 nm Tungsten Gate Reactive Ion Etching Process for Compound Semiconductor Transistors [My Copy] Japanese Journal of Applied Physics, Vol. 45, No. 10B. (2006), pp. 8364-8369. by Xu Li, Haiping Zhou, Chris D. W. Wilkinson, Iain G. Thayne posted to optical-emission-spectroscopy tungsten by these_morel on 2006-12-14 14:15:27 as
	Anisotropic dry etching of submicron W features using a Ti mask [My Copy] Semiconductor Science and Technology, Vol. 7, No. 12. (1992), pp. 1489-1494. by T. R. Fullowan, S. J. Pearton, F. Ren, G. E. Mahoney, R. L. Kostelak posted to cf4 etching sf6 tungsten by these_morel on 2006-12-14 14:09:51 as
	Reactive Ion Etching of Tungsten in SF[sub 6]-N[sub 2] Plasma [My Copy] Journal of Electrochemical Society, Vol. 137, No. 1. (January 1990), pp. 225-229. by Nobuki Mutsukura, Guy Turban posted to sf6-n2 tungsten xps by these_morel on 2006-12-13 15:27:43 as
	30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to c4f8 etching icp sf6 tungsten by these_morel on 2006-07-26 12:51:56 as along with 1 person Stanley_vrc
	The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers [My Copy] Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150. by H. C. Lee, S. Vanhaelemeersch posted to cl2 etching masking-materials sf6-ar tungsten by these_morel on 2006-06-19 09:39:31 as along with 1 person Stanley_vrc
	A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel on 2006-06-19 09:36:54 as along with 1 person Stanley_vrc
	Tungsten etching mechanisms in CF[sub 4]/O[sub 2] reactive ion etching plasmas [My Copy] Journal of Applied Physics, Vol. 66, No. 10. (1989), pp. 5034-5038. by Tim D. Bestwick, Gottlieb S. Oehrlein posted to cf4-o2 rie tungsten xps by these_morel on 2006-05-12 09:49:54 as along with 1 person Stanley_vrc
	Etching processes of tungsten in SF[sub 6]-O[sub 2] radio-frequency plasmas [My Copy] Journal of Applied Physics, Vol. 70, No. 6. (1991), pp. 3314-3323. by M. C. Peignon, Ch Cardinaud, G. Turban posted to actinometry sf6-o2 tungsten by these_morel on 2006-03-21 14:28:01 as along with 1 person Stanley_vrc
	Temperature Effect on Tungsten Etching Using a Cl2/O2 Helicon Discharge [My Copy] Journal of the Korean Physical Society, Vol. 43, No. 4. (October 2003), pp. 526-528. by Hyoun W. Kim posted to cl2-o2 etching helicon-plasma temperature tungsten by these_morel on 2006-03-21 12:00:53 as along with 1 person Stanley_vrc
	Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3. (1995), pp. 914-917. by Sung K. Kwon, Kyung N. Kim, Chul W. Nam, Seong I. Woo posted to cf4-o2 co co2 etching plasmas rie tungsten by these_morel on 2006-03-03 12:35:35 as
	Reactive ion etching of a 20 nanometers tungsten gate using a SF[sub 6]/N[sub 2] chemistry and hydrogen silsesquioxane hard mask resist [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5. (2005), pp. 2046-2050. by Guilhem Larrieu, Emmanuel Dubois posted to rie sf6-n2 tungsten by these_morel on 2006-02-28 15:15:26 as
	High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon [My Copy] Papers from the 44th international conference on electron, ion, and photon beam technology and nanofabrication, Vol. 18, No. 6. (2000), pp. 3471-3475. by Andrew L. Goodyear, Sinclair Mackenzie, Deirdre L. Olynick, Erik H. Anderson posted to icp sf6-o2 temperature tungsten by these_morel on 2006-02-28 15:13:45 as
	Use of neural networks to model low-temperature tungsten etch characteristics in high density SF[sub 6] plasma [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 2. (2000), pp. 417-422. by Byungwhan Kim, Jun H. Sun, Chang J. Choi, Dong D. Lee, Yeo S. Seol posted to helicon-plasma neural-networks sf6 tungsten by these_morel on 2006-02-28 15:11:08 as
	Study of W/Ti triode plasma etching [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, No. 5. (1992), pp. 3076-3085. by J. F. Coulon, G. Turban, P. Rabinzohn, L. Jeannerot posted to etching plasmas sf6-n2 sicl4-cl2 titanium tungsten by these_morel on 2006-02-28 15:02:41 as
	The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, No. 2. (1989), pp. 167-174. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to cf3-cl cf4-o2 plasma rie tungsten by these_morel on 2006-02-28 14:52:40 as
	Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041. by Gottlieb S. Oehrlein, Lennart J. Lindstom posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as
	Ion-bombardment-enhanced plasma etching of tungsten with NF[sub 3]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 5. (1988), pp. 1570-1572. by W. M. Greene, D. W. Hess, W. G. Oldham posted to etching nf3-o2 plasma tungsten by these_morel on 2006-02-28 14:45:35 as
	Selective reactive ion etching of tungsten films in CHF[sub 3] and other fluorinated gases [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 4. (1988), pp. 1073-1080. by W. S. Pan, A. J. Steckl posted to cbrf3 cf4 chf3 plasma rie sf6 tungsten by these_morel on 2006-02-28 14:43:21 as
	Effects of Nitrogen Additive Gas on Sidewall Passivation in W/TiN/High-k Dielectric Gate Etching [My Copy] Microprocesses and Nanotechnology Conference, 2000 International (2000), pp. 210-211. by Jae-Young Kim, Yu-Kwon Kim, Kwang-Ok Kim, Chang J. Choi, Jin W. Kim posted to dielectric etching gate high-k metal tin tungsten by these_morel on 2006-02-17 13:47:00 as

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plasma	54
etching	48
introduction	46
tungsten	45
xps	39
dispositifs-experimentaux	26
high-k	22
hfo2	19
rie	16
cl2	15
icp	15
tungsten-nitride	15
cl2-o2	14
poly-si	13
actinometry	11
microelectronics	11
gate	10
cf4	9
dielectric	9
mass-spectrometry	9
metal	9
silicon	9
fluorocarbon	8
metal-gate	8
parois	8
absorption	7
cf4-o2	7
fluorine	7
molybdenum	7
passivation	7
tin	7
plasmas	6
polydepletion	6
reactor	6
sf6	6
cleaning	5
cmos	5
hbr	5
notching	5
resist-trimming	5
sf6-ar	5
sf6-n2	5
sf6-o2	5
tan	5
titane_nitride	5
wsi	5
annexes	4
bcl3	4
ecr	4
hbr-cl2-o2	4
nf3	4
oxidation	4
sio2	4
wet-etching	4
ar	3
chemical-vapor-deposition	3
decomposition	3
dissociation	3
dual-metal-gate	3
effet-de-charge	3
nitrogen	3
optical-emission-spectroscopy	3
recess	3
resistivity	3
tem	3
temperature	3
tungsten-oxide	3
tunneling	3
volatility	3
work-function	3
zro2	3
arxps	2
bcl3-o2	2
c4f8	2
cf4-cl2	2
chf3	2
cl2-nf3-o2	2
deposition	2
doping	2
hbr-o2	2
helicon-plasma	2
hfalo	2
incorporation	2
materials	2
meb	2
microloading	2
nf3-o2	2
o2	2
polymer_layer	2
ruthenium	2
sicl4-cl2	2
titanium	2
wcl	2
wocl	2
wsix	2
xrr	2
3d-integration	1
45nm	1
aluminium	1
angle	1
bowing	1
c4f8-ar-h2	1
capacitive	1
cbrf3	1
ccl4-o2	1
cf3-cl	1
chf3-cl2-bcl3	1
clo	1
co	1
co2	1
damage	1
deformation-resist	1
dhf	1
dry-etching	1
eels	1
eftem	1
eot	1
etchback	1
floating_sample	1
gate-patterning	1
gravure	1
hf	1
hfn	1
hfon	1
hfsio	1
hfsion	1
interconnections	1
interferometry	1
lam	1
line-edge-roughness	1
lpcvd	1
magnetoplasma	1
masking-materials	1
microelectronique	1
microtrenching	1
midgap	1
molecular-beam-system	1
moores-law	1
morel	1
mosi	1
n2	1
negative-ion	1
neural-networks	1
new-devices	1
nf3-h2	1
nf3-he	1
nh3	1
overetch	1
oxygen	1
photoresist	1
pulverisation	1
selectivity	1
sf6-ar-cl2	1
sf6-chf3	1
silicidation	1
sputter-deposition	1
tac	1
taper	1
tcp	1
tcp_9400	1
thomas	1
time-delay-effect	1
tungstene	1
uhf-ecr	1
vlsi	1
wcl4	1
wco6	1
wiggling	1
zralo	1

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