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Weave patterned organic transistors on fiber for E-textiles Export

Electron Devices, IEEE Transactions on In Electron Devices, IEEE Transactions on, Vol. 52, No. 2. (2005), pp. 269-275.

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Flexible transistors were formed directly on fibers in a novel weave-masking fabrication process. Pentacene fiber transistors exhibit mobilities of >0.5 cm<sup>2</sup>/V-s measured at 20 V V<sub>DD</sub> and operate stably under a wide range of flexion stress. Devices are defined and positioned solely by a weaving pattern, meaning that simple circuits could potentially be directly built into fabric during manufacturing. This development offers a novel approach for providing information routing within fabric, which is currently a major hurdle in electronic textile development.


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