Towards the textile transistor: Assembly and characterization of an organic field effect transistor with a cylindrical geometry Export

@article{citeulike:957721, abstract = {Cylindrical organic field effect transistors have been obtained starting from a metallic fiber used in textile processes. The metal core of the yarn, covered with a thin polyimide layer, is the gate of the structure. A top-contact device can be obtained by depositing a layer of organic semiconductor followed by the deposition of source and drain top contacts, made by metals or conductive polymers, deposited by evaporation or soft lithography. Thanks to the flexibility of the structure and the low cost of technologies, this device is a meaningful step towards innovative applications of textile electronics. \©2006 American Institute of Physics}, author = {Maccioni, Maurizio and Orgiu, Emanuele and Cosseddu, Piero and Locci, Simone and Bonfiglio, Annalisa}, citeulike-article-id = {957721}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000089000014143515000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?APL/89/143515}, citeulike-linkout-2 = {http://dx.doi.org/10.1063/1.2357030}, doi = {10.1063/1.2357030}, journal = {Applied Physics Letters}, number = {14}, posted-at = {2009-01-09 23:30:17}, priority = {2}, publisher = {AIP}, title = {Towards the textile transistor: Assembly and characterization of an organic field effect transistor with a cylindrical geometry}, url = {http://dx.doi.org/10.1063/1.2357030}, volume = {89}, year = {2006} }

TY - JOUR ID - citeulike:957721 L3 - citeulike-article-id:957721 N2 - Cylindrical organic field effect transistors have been obtained starting from a metallic fiber used in textile processes. The metal core of the yarn, covered with a thin polyimide layer, is the gate of the structure. A top-contact device can be obtained by depositing a layer of organic semiconductor followed by the deposition of source and drain top contacts, made by metals or conductive polymers, deposited by evaporation or soft lithography. Thanks to the flexibility of the structure and the low cost of technologies, this device is a meaningful step towards innovative applications of textile electronics. ©2006 American Institute of Physics IS - 14 JF - Applied Physics Letters TI - Towards the textile transistor: Assembly and characterization of an organic field effect transistor with a cylindrical geometry PB - AIP VL - 89 AU - Maccioni, Maurizio AU - Orgiu, Emanuele AU - Cosseddu, Piero AU - Locci, Simone AU - Bonfiglio, Annalisa PY - 2006/// UR - http://dx.doi.org/10.1063/1.2357030 ER -