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SRAM Leakage Suppression by Minimizing Standby Supply Voltage

by: Hulfang Qin, Yu Cao, Dejan Markovic, Andrei Vladimirescu, Jan Rabaey
In International Symposium on Quality Electronic Design (ISQED), Vol. 0 (March 2004), pp. 55-60, doi:10.1109/isqed.2004.1283650  Key: citeulike:6982827

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Abstract

Suppressing the leakage current in memories is critical in low-power design. By reducing the standby supply voltage (V


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