Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations Export

@article{citeulike:4687493, abstract = {The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent k ⋅ p Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single-particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one; four; and six bands; and with results from a one-band approximation in which m eff ( r →) is determined by the local value of the strain. The eight-band model predicts a lower ground-state energy and a larger number of excited states than the other approximations.}, author = {Pryor, Craig}, citeulike-article-id = {4687493}, citeulike-linkout-0 = {http://dx.doi.org/10.1103/PhysRevB.57.7190}, citeulike-linkout-1 = {http://link.aps.org/abstract/PRB/v57/i12/p7190_1}, citeulike-linkout-2 = {http://link.aps.org/pdf/PRB/v57/i12/p7190_1}, doi = {10.1103/PhysRevB.57.7190}, journal = {Physical Review B}, keywords = {kdotp}, month = {Mar}, number = {12}, pages = {7190--7195}, posted-at = {2009-05-31 09:23:11}, priority = {2}, publisher = {American Physical Society}, title = {Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations}, url = {http://dx.doi.org/10.1103/PhysRevB.57.7190}, volume = {57}, year = {1998} }

TY - JOUR ID - citeulike:4687493 L3 - citeulike-article-id:4687493 N2 - The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent k ⋅ p Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single-particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one; four; and six bands; and with results from a one-band approximation in which m eff ( r →) is determined by the local value of the strain. The eight-band model predicts a lower ground-state energy and a larger number of excited states than the other approximations. IS - 12 JF - Physical Review B EP - 7195 TI - Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations PB - American Physical Society VL - 57 SP - 7190 KW - kdotp AU - Pryor, Craig PY - 1998/Mar// UR - http://dx.doi.org/10.1103/PhysRevB.57.7190 ER -