Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts Export

@article{citeulike:5794596, abstract = {Plasma-enhanced low temperature growth (\<300 degC) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degC have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs.}, author = {Yu, Linwei and O'Donnell, Benedict and Alet, Pierre-Jean and Conesa-Boj, S. and Peiro, F. and Arbiol, J. and Cabarrocas, Pere R.}, citeulike-article-id = {5794596}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/0957-4484/20/22/225604}, doi = {10.1088/0957-4484/20/22/225604}, journal = {Nanotechnology}, keywords = {growth, hierarchical, indium, low, nanowires, publications, silicon, structures, temperature, tin}, number = {22}, pages = {225604+}, posted-at = {2009-09-17 10:01:52}, priority = {2}, title = {Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts}, url = {http://dx.doi.org/10.1088/0957-4484/20/22/225604}, volume = {20}, year = {2009} }

TY - JOUR ID - citeulike:5794596 L3 - citeulike-article-id:5794596 N2 - Plasma-enhanced low temperature growth (<300 degC) of silicon nanowires (SiNWs) and hierarchical structures via a vapor-liquid-solid (VLS) mechanism are investigated. The SiNWs were grown using tin and indium as catalysts prepared by in situ H2 plasma reduction of SnO2 and ITO substrates, respectively. Effective growth of SiNWs at temperatures as low as 240 degC have been achieved, while tin is found to be more ideal than indium in achieving a better size and density control of the SiNWs. Ultra-thin (4-8 nm) silica nanowires, sprouting from the dendritic nucleation patterns on the catalyst's surface, were also observed to form during the cooling process. A kinetic growth model has been proposed to account for their formation mechanism. This hierarchical structure combines the advantages of the size and position controllability from the catalyst-on-top VLS-SiNWs and the ultra-thin size from the catalyst-on-bottom VLS-ScNWs. IS - 22 JF - Nanotechnology TI - Plasma-enhanced low temperature growth of silicon nanowires and hierarchical structures by using tin and indium catalysts VL - 20 SP - 225604 KW - growth KW - hierarchical KW - indium KW - low KW - nanowires KW - publications KW - silicon KW - structures KW - temperature KW - tin AU - Yu, Linwei AU - O'Donnell, Benedict AU - Alet, Pierre-Jean AU - Conesa-Boj, S AU - Peiro, F AU - Arbiol, J AU - Cabarrocas, Pere PY - 2009/// UR - http://dx.doi.org/10.1088/0957-4484/20/22/225604 ER -