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RF W-band wafer-to-wafer transitionMicrowave Theory and Techniques, IEEE Transactions on In Microwave Theory and Techniques, IEEE Transactions on, Vol. 49, No. 4. (2001), pp. 600-608.
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AbstractMultiwafer silicon designs must provide an avenue for electrical signals to flow from wafer to wafer. For this purpose, a two-layer electrical bond is proposed to provide electrical connection between two coplanar waveguides printed on the adjacent faces of two vertically stacked silicon wafers. In addition to serving as a versatile low-temperature thermocompression wafer bond, loss of approximately 0.1 dB is measured for this novel compact packaged wafer-to-wafer transition from 75 to 110 GHz
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