A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process Export

@article{citeulike:3441571, abstract = {This paper presents a post-CMOS process to monolithically integrate a piezoresistive cantilever for lateral force detection and signal processing circuitry. The fabrication process includes a standard CMOS process and one more lithography step to micromachine the cantilever structure in the post-CMOS process. The piezoresistors are doped in the CMOS process but defined in the post-CMOS micromachining process without any extra process required. A partially split cantilever configuration is developed for the lateral force detection. The piezoresistors are self-aligned to the split cantilever, and therefore the width of the beam is only limited by lithography. Consequently, this kind of cantilever potentially has a high resolution. The preliminary experimental results show expected performances of the fabricated piezoresistors and electronic circuits.}, author = {Ji, Xu and Li, Zhihong and Xi, Jianzhong and Li, Juan and Wang, Yangyuan}, citeulike-article-id = {3441571}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/0960-1317/18/11/115001}, doi = {10.1088/0960-1317/18/11/115001}, journal = {Journal of Micromechanics and Microengineering}, keywords = {cmos-mems, piezoelectric-actuation}, number = {11}, pages = {115001+}, posted-at = {2008-10-23 01:27:39}, priority = {2}, title = {A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process}, url = {http://dx.doi.org/10.1088/0960-1317/18/11/115001}, volume = {18}, year = {2008} }

TY - JOUR ID - citeulike:3441571 L3 - citeulike-article-id:3441571 N2 - This paper presents a post-CMOS process to monolithically integrate a piezoresistive cantilever for lateral force detection and signal processing circuitry. The fabrication process includes a standard CMOS process and one more lithography step to micromachine the cantilever structure in the post-CMOS process. The piezoresistors are doped in the CMOS process but defined in the post-CMOS micromachining process without any extra process required. A partially split cantilever configuration is developed for the lateral force detection. The piezoresistors are self-aligned to the split cantilever, and therefore the width of the beam is only limited by lithography. Consequently, this kind of cantilever potentially has a high resolution. The preliminary experimental results show expected performances of the fabricated piezoresistors and electronic circuits. IS - 11 JF - Journal of Micromechanics and Microengineering TI - A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process VL - 18 SP - 115001 KW - cmos-mems KW - piezoelectric-actuation AU - Ji, Xu AU - Li, Zhihong AU - Xi, Jianzhong AU - Li, Juan AU - Wang, Yangyuan PY - 2008/// UR - http://dx.doi.org/10.1088/0960-1317/18/11/115001 ER -