Low-voltage large-value tunable capacitors using selfaligned HARPSS Export

@proceedings{mina2008, abstract = {This paper presents a silicon microfabrication technique for the implementation of large-value one-port and two-port tunable capacitors with very small tuning voltages. The proposed process offers very high aspect- ratio narrow vertical gaps of different sizes in a self- aligned manner, allowing the realization of in-plane tunable capacitors in a small area. A continuous tuning of 240\% is achieved for a 15 pF two-port capacitor with the application of 3.5 V. A 106 pF one-port capacitor occupies an area of 8 mm² and is tuned to 130 pF with a tuning voltage of 0.9 V.}, author = {Rais-Zadeh, M. and Samarao, A. K. and Monajemi, P. and Ayazi, F.}, booktitle = {Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on}, citeulike-article-id = {3576153}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/MEMSYS.2008.4443657}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4443657}, doi = {10.1109/MEMSYS.2008.4443657}, journal = {Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on}, keywords = {harpss, mems, varactor}, pages = {319--322}, posted-at = {2008-11-19 02:21:43}, priority = {2}, title = {Low-voltage large-value tunable capacitors using selfaligned HARPSS}, url = {http://dx.doi.org/10.1109/MEMSYS.2008.4443657}, year = {2008} }

TY - CONF ID - mina2008 L3 - citeulike-article-id:3576153 N2 - This paper presents a silicon microfabrication technique for the implementation of large-value one-port and two-port tunable capacitors with very small tuning voltages. The proposed process offers very high aspect- ratio narrow vertical gaps of different sizes in a self- aligned manner, allowing the realization of in-plane tunable capacitors in a small area. A continuous tuning of 240% is achieved for a 15 pF two-port capacitor with the application of 3.5 V. A 106 pF one-port capacitor occupies an area of 8 mm² and is tuned to 130 pF with a tuning voltage of 0.9 V. JF - Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on EP - 322 TI - Low-voltage large-value tunable capacitors using selfaligned HARPSS T2 - Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on SP - 319 KW - harpss KW - mems KW - varactor AU - Rais-Zadeh, M AU - Samarao, AK AU - Monajemi, P AU - Ayazi, F PY - 2008/// UR - http://dx.doi.org/10.1109/MEMSYS.2008.4443657 ER -