An absorptive single-pole four-throw switch using multiple-contact MEMS switches and its application to a monolithic millimeter-wave beam-forming network Export

@article{Sanghyo2008, abstract = {In this paper, a new absorptive single-pole four-throw (SP4T) switch based on multiple-contact switching is proposed and integrated with a Butler matrix to demonstrate a monolithic beam-forming network at millimeter waves (mm waves). In order to simplify the switching driving circuit and reduce the number of unit switches in an absorptive SP4T switch, the individual switches were replaced with long-span multiple-contact switches using stress-free single-crystalline-silicon MEMS technology. This approach improves the mechanical stability as well as the manufacturing yield, thereby allowing successful integration into a monolithic beam former. The fabricated absorptive SP4T MEMS switch shows insertion loss less than 1.3 dB, return losses better than 11 dB at 30 GHz and wideband isolation performance higher than 39 dB from 20 to 40 GHz. The absorptive SP4T MEMS switch is integrated with a 4 \&\#215; 4 Butler matrix on a single chip to implement a monolithic beam-forming network, directing beam into four distinct angles. Array factors from the measured data show that the proposed absorptive SPnT MEMS switch can be effectively used for high-performance mm-wave beam-switching systems. This work corresponds to the first demonstration of a monolithic beam-forming network using switched beams.}, author = {Lee, Sanghyo and Kim, Jong-Man and Kim, Yong-Kweon and Kwon, Youngwoo}, citeulike-article-id = {3873180}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/0960-1317/19/1/015024}, comment = {1. an architecture for absorptive switch using lambda/4 lines and matched load 2. uses flip-chip bonded bulk-etched silicon actuator. electrostatically based. 3. anodically bonded.}, doi = {10.1088/0960-1317/19/1/015024}, journal = {Journal of Micromechanics and Microengineering}, keywords = {absorptive-switch, mems-switch}, number = {1}, pages = {015024+}, posted-at = {2009-01-10 15:16:45}, priority = {2}, title = {An absorptive single-pole four-throw switch using multiple-contact MEMS switches and its application to a monolithic millimeter-wave beam-forming network}, url = {http://dx.doi.org/10.1088/0960-1317/19/1/015024}, volume = {19}, year = {2009} }

TY - JOUR ID - Sanghyo2008 L3 - citeulike-article-id:3873180 N2 - In this paper, a new absorptive single-pole four-throw (SP4T) switch based on multiple-contact switching is proposed and integrated with a Butler matrix to demonstrate a monolithic beam-forming network at millimeter waves (mm waves). In order to simplify the switching driving circuit and reduce the number of unit switches in an absorptive SP4T switch, the individual switches were replaced with long-span multiple-contact switches using stress-free single-crystalline-silicon MEMS technology. This approach improves the mechanical stability as well as the manufacturing yield, thereby allowing successful integration into a monolithic beam former. The fabricated absorptive SP4T MEMS switch shows insertion loss less than 1.3 dB, return losses better than 11 dB at 30 GHz and wideband isolation performance higher than 39 dB from 20 to 40 GHz. The absorptive SP4T MEMS switch is integrated with a 4 × 4 Butler matrix on a single chip to implement a monolithic beam-forming network, directing beam into four distinct angles. Array factors from the measured data show that the proposed absorptive SPnT MEMS switch can be effectively used for high-performance mm-wave beam-switching systems. This work corresponds to the first demonstration of a monolithic beam-forming network using switched beams. IS - 1 JF - Journal of Micromechanics and Microengineering TI - An absorptive single-pole four-throw switch using multiple-contact MEMS switches and its application to a monolithic millimeter-wave beam-forming network VL - 19 SP - 015024 KW - absorptive-switch KW - mems-switch N1 - 1. an architecture for absorptive switch using lambda/4 lines and matched load 2. uses flip-chip bonded bulk-etched silicon actuator. electrostatically based. 3. anodically bonded. AU - Lee, Sanghyo AU - Kim, Jong-Man AU - Kim, Yong-Kweon AU - Kwon, Youngwoo PY - 2009/// UR - http://dx.doi.org/10.1088/0960-1317/19/1/015024 ER -