Wafer-Scale Packaged RF Microelectromechanical Switches Export

@article{Muldavin:2008, abstract = {This paper presents results of fully packaged RF microelectromechanical (RF-MEM) switches including capacitive series, series-shunt, and single-pole-four-throw (SP4T) switch nodes. The RF-MEM capacitive switches are packaged using recently developed wafer scale low-loss and broadband packaging technology developed at MIT Lincoln Laboratory, Lexington, MA. A packaged series capacitive switch with 0.11-dB insertion loss and better than 19-dB isolation, a series-shunt packaged capacitive switch with 0.3-dB insertion loss and better than 54 dB isolation, and an SP4T switch with less than 0.26-dB insertion loss and better than 25-dB isolation at 20 GHz are reported. Detailed reliability, radiation, cryogenic, and power-handling data are also presented.}, author = {Muldavin, J. and Bozler, C. O. and Rabe, S. and Wyatt, P. W. and Keast, C. L.}, booktitle = {Microwave Theory and Techniques, IEEE Transactions on}, citeulike-article-id = {4013886}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/TMTT.2007.914654}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4435093}, comment = {1. key merits: series switch: 19db@20G isolation and 0.11dB insertion loss; series shunt switch: 0.3dB loss and 54dB isolation @20g package introduced loss: 0.06 per transition ---=note-separator=--- 1. lifetime test >100billion cycles; 2. voltage hold test method: actuate the switch with Vp and hold the switch in the down state by Vh in 1-h increments, then lower Vh until the switch releases. record the pull-down voltage and release voltage each time. ---=note-separator=--- simulation of the power handling capabilities of RF MEMS switches is not explored till now. The simulation will involve coupled dynamic thermal, electromechanical, electromagnetics. ---=note-separator=--- dielectric charging effect under cryogenic temperature is also an interesting topic. }, doi = {10.1109/TMTT.2007.914654}, journal = {Microwave Theory and Techniques, IEEE Transactions on}, keywords = {capacitive-switch, lincoln-lab-switch, mems-switch, reliability}, number = {2}, pages = {522--529}, posted-at = {2009-02-05 20:07:16}, priority = {2}, title = {Wafer-Scale Packaged RF Microelectromechanical Switches}, url = {http://dx.doi.org/10.1109/TMTT.2007.914654}, volume = {56}, year = {2008} }

TY - JOUR ID - Muldavin:2008 L3 - citeulike-article-id:4013886 N2 - This paper presents results of fully packaged RF microelectromechanical (RF-MEM) switches including capacitive series, series-shunt, and single-pole-four-throw (SP4T) switch nodes. The RF-MEM capacitive switches are packaged using recently developed wafer scale low-loss and broadband packaging technology developed at MIT Lincoln Laboratory, Lexington, MA. A packaged series capacitive switch with 0.11-dB insertion loss and better than 19-dB isolation, a series-shunt packaged capacitive switch with 0.3-dB insertion loss and better than 54 dB isolation, and an SP4T switch with less than 0.26-dB insertion loss and better than 25-dB isolation at 20 GHz are reported. Detailed reliability, radiation, cryogenic, and power-handling data are also presented. IS - 2 JF - Microwave Theory and Techniques, IEEE Transactions on EP - 529 TI - Wafer-Scale Packaged RF Microelectromechanical Switches VL - 56 T2 - Microwave Theory and Techniques, IEEE Transactions on SP - 522 KW - capacitive-switch KW - lincoln-lab-switch KW - mems-switch KW - reliability N1 - 1. key merits: series switch: 19db@20G isolation and 0.11dB insertion loss; series shunt switch: 0.3dB loss and 54dB isolation @20g package introduced loss: 0.06 per transition N1 - 1. lifetime test >100billion cycles; 2. voltage hold test method: actuate the switch with Vp and hold the switch in the down state by Vh in 1-h increments, then lower Vh until the switch releases. record the pull-down voltage and release voltage each time. N1 - simulation of the power handling capabilities of RF MEMS switches is not explored till now. The simulation will involve coupled dynamic thermal, electromechanical, electromagnetics. N1 - dielectric charging effect under cryogenic temperature is also an interesting topic. AU - Muldavin, J AU - Bozler, CO AU - Rabe, S AU - Wyatt, PW AU - Keast, CL PY - 2008/// UR - http://dx.doi.org/10.1109/TMTT.2007.914654 ER -