Formation of two dimension Ge cluster superlattice on Si(1 1 1)-(7 x 7) surface

by: Long Yan, Yongping Zhang, Hongjun Gao, Sishen Xie, Shijin Pang

Surface Science, Vol. 506, No. 1-2. (10 May 2002), pp. L255-L260.

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Abstract

The adsorption process of sub-monolayer Ge on Si(1 1 1)-(7×7) surface is studied using ultrahigh-vacuum scanning tunneling microscopy. By carefully controlling Ge deposition condition, a unique sixfold symmetry superlattice of Ge clusters is formed. It is found that almost all the Ge clusters observed have similar shapes and uniform sizes, and that they sit on both halves of the (7×7) unit cells. The formation of the ordered structure is attributed to the fact that the characteristic Si(1 1 1)-(7×7) reconstruction controls the nucleation and growth of the Ge clusters.

@article{citeulike:771141, abstract = {The adsorption process of sub-monolayer Ge on Si(1 1 1)-(7×7) surface is studied using ultrahigh-vacuum scanning tunneling microscopy. By carefully controlling Ge deposition condition, a unique sixfold symmetry superlattice of Ge clusters is formed. It is found that almost all the Ge clusters observed have similar shapes and uniform sizes, and that they sit on both halves of the (7×7) unit cells. The formation of the ordered structure is attributed to the fact that the characteristic Si(1 1 1)-(7×7) reconstruction controls the nucleation and growth of the Ge clusters.}, author = {Yan, Long and Zhang, Yongping and Gao, Hongjun and Xie, Sishen and Pang, Shijin }, citeulike-article-id = {771141}, doi = {10.1016/S0039-6028(01)01820-9}, journal = {Surface Science}, keywords = {clusters, si-7x7}, month = {May}, number = {1-2}, pages = {L255--L260}, posted-at = {2006-07-24 14:21:01}, priority = {2}, title = {Formation of two dimension Ge cluster superlattice on Si(1 1 1)-(7 x 7) surface}, url = {http://dx.doi.org/10.1016/S0039-6028(01)01820-9}, volume = {506}, year = {2002} }

RIS record

TY - JOUR ID - citeulike:771141 L3 - citeulike-article-id:771141 TI - Formation of two dimension Ge cluster superlattice on Si(1 1 1)-(7 x 7) surface JF - Surface Science VL - 506 IS - 1-2 SP - L255 EP - L260 N2 - The adsorption process of sub-monolayer Ge on Si(1 1 1)-(7×7) surface is studied using ultrahigh-vacuum scanning tunneling microscopy. By carefully controlling Ge deposition condition, a unique sixfold symmetry superlattice of Ge clusters is formed. It is found that almost all the Ge clusters observed have similar shapes and uniform sizes, and that they sit on both halves of the (7×7) unit cells. The formation of the ordered structure is attributed to the fact that the characteristic Si(1 1 1)-(7×7) reconstruction controls the nucleation and growth of the Ge clusters. KW - clusters KW - si-7x7 AU - Yan, Long AU - Zhang, Yongping AU - Gao, Hongjun AU - Xie, Sishen AU - Pang, Shijin PY - 2002/05/10/ UR - http://dx.doi.org/10.1016/S0039-6028(01)01820-9 ER -

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